Jove
Visualize
Contact Us
JoVE
x logofacebook logolinkedin logoyoutube logo
ABOUT JoVE
OverviewLeadershipBlogJoVE Help Center
AUTHORS
Publishing ProcessEditorial BoardScope & PoliciesPeer ReviewFAQSubmit
LIBRARIANS
TestimonialsSubscriptionsAccessResourcesLibrary Advisory BoardFAQ
RESEARCH
JoVE JournalMethods CollectionsJoVE Encyclopedia of ExperimentsArchive
EDUCATION
JoVE CoreJoVE BusinessJoVE Science EducationJoVE Lab ManualFaculty Resource CenterFaculty Site
Terms & Conditions of Use
Privacy Policy
Policies

Filters

Ji-Hui Yang

Showing results (1-10 of 27) with videos related to

Pageof 3
Sort By:
Nanoscale|August 8, 2022
Abnormally weak intervalley electron scattering in MoS<sub>2</sub> monolayer: insights from the matching between electron and phonon bandsShiru Song, Ji-Hui Yang, Xin-Gao Gong
Nano Letters|July 14, 2025
Bright Dipolar Excitons with Valley-Locked and Polarization-Tunable Orientations in Monolayer Ti<sub>2</sub>SiCO<sub>2</sub>Haozhe Li, Xin-Gao Gong, Ji-Hui Yang
Nano Letters|December 12, 2018
Two-Level Quantum Systems in Two-Dimensional Materials for Single Photon EmissionSunny Gupta, Ji-Hui Yang, Boris I Yakobson
Nanoscale|March 2, 2022
Semiconductor-to-metal transition from monolayer to bilayer blue phosphorous induced by extremely strong interlayer coupling: a first-principles studyDan-Dong Wang, Xin-Gao Gong, Ji-Hui Yang
Nanoscale|July 10, 2023
Origin of p-type conductivity in a WSe<sub>2</sub> monolayerYu-Zhou Zhang, Guo-Jun Zhu, Ji-Hui Yang
Nanoscale|September 17, 2021
Unusual interlayer coupling in layered Cu-based ternary chalcogenides CuMCh<sub>2</sub> (M = Sb, Bi; Ch = S, Se)Dan-Dong Wang, Xin-Gao Gong, Ji-Hui Yang
Physical Review Letters|March 14, 2025
Intrinsic Breakdown Strength: Theoretical Derivation and First-Principles CalculationsShixu Liu, Hongjun Xiang, Xin-Gao Gong, et al.
Scientific Reports|February 17, 2016
Non-Radiative Carrier Recombination Enhanced by Two-Level Process: A First-Principles StudyJi-Hui Yang, Lin Shi, Lin-Wang Wang, et al.
The Journal of Physical Chemistry Letters|December 31, 2020
Fully Boron-Sheet-Based Field Effect Transistors from First-Principles: Inverse Design of Semiconducting Boron SheetsYi-Lin Zhang, Ji-Hui Yang, Hongjun Xiang, et al.
Nanoscale|May 13, 2021
Semiconducting α'-boron sheet with high mobility and low all-boron contact resistance: a first-principles studyJun-Jie Zhang, Tariq Altalhi, Ji-Hui Yang, et al.
Pageof 3

Showing results (1-10 of 27) with videos related to

Sort By:
Pageof 3
Nanoscale|August 8, 2022
Abnormally weak intervalley electron scattering in MoS<sub>2</sub> monolayer: insights from the matching between electron and phonon bandsShiru Song, Ji-Hui Yang, Xin-Gao Gong
Nano Letters|July 14, 2025
Bright Dipolar Excitons with Valley-Locked and Polarization-Tunable Orientations in Monolayer Ti<sub>2</sub>SiCO<sub>2</sub>Haozhe Li, Xin-Gao Gong, Ji-Hui Yang
Nano Letters|December 12, 2018
Two-Level Quantum Systems in Two-Dimensional Materials for Single Photon EmissionSunny Gupta, Ji-Hui Yang, Boris I Yakobson
Nanoscale|March 2, 2022
Semiconductor-to-metal transition from monolayer to bilayer blue phosphorous induced by extremely strong interlayer coupling: a first-principles studyDan-Dong Wang, Xin-Gao Gong, Ji-Hui Yang
Nanoscale|July 10, 2023
Origin of p-type conductivity in a WSe<sub>2</sub> monolayerYu-Zhou Zhang, Guo-Jun Zhu, Ji-Hui Yang
Nanoscale|September 17, 2021
Unusual interlayer coupling in layered Cu-based ternary chalcogenides CuMCh<sub>2</sub> (M = Sb, Bi; Ch = S, Se)Dan-Dong Wang, Xin-Gao Gong, Ji-Hui Yang
Physical Review Letters|March 14, 2025
Intrinsic Breakdown Strength: Theoretical Derivation and First-Principles CalculationsShixu Liu, Hongjun Xiang, Xin-Gao Gong, et al.
Scientific Reports|February 17, 2016
Non-Radiative Carrier Recombination Enhanced by Two-Level Process: A First-Principles StudyJi-Hui Yang, Lin Shi, Lin-Wang Wang, et al.
The Journal of Physical Chemistry Letters|December 31, 2020
Fully Boron-Sheet-Based Field Effect Transistors from First-Principles: Inverse Design of Semiconducting Boron SheetsYi-Lin Zhang, Ji-Hui Yang, Hongjun Xiang, et al.
Nanoscale|May 13, 2021
Semiconducting α'-boron sheet with high mobility and low all-boron contact resistance: a first-principles studyJun-Jie Zhang, Tariq Altalhi, Ji-Hui Yang, et al.
Pageof 3