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Scientific Reports|July 26, 2017
Combined atomic force microscopy and photoluminescence imaging to select single InAs/GaAs quantum dots for quantum photonic devicesLuca Sapienza, Jin Liu, Jin Dong Song, et al.Optics Express|October 10, 2013
Directional terahertz emission from corrugated InAs structuresJong-Hyuk Yim, Hoonil Jeong, Muhammad Irfan, et al.Journal of Nanoscience and Nanotechnology|February 10, 2009
Effect of rapid thermal annealing on the electrical properties of GaAs Schottky diodes embedded with self-assembled InAs quantum dotsFlorian Colleaux, Jungil Lee, Byung Yong Yu, et al.Physical Review Applied|June 6, 2017
Acousto-optic modulation and opto-acoustic gating in piezo-optomechanical circuitsKrishna C Balram, Marcelo I Davanço, B Robert Ilic, et al.ACS Omega|August 29, 2019
Post-thermal-Induced Recrystallization in GaAs/Al0.3Ga0.7As Quantum Dots Grown by Droplet Epitaxy with Near-Unity StoichiometryInah Yeo, Kyung Soo Yi, Eun Hye Lee, et al.Journal of Nanoscience and Nanotechnology|March 31, 2011
Applicability of steady state model to carrier thermodynamics in InAs quantum dotM H Abdellatif, O S Kopylov, Jin Dong Song, et al.Journal of Nanoscience and Nanotechnology|September 16, 2015
Polarized Terahertz Waves Emitted from In0.2Ga0.8As NanowiresJong-Hyuk Yim, Muhammad Irfan, Kyoung-Jin Song, et al.Optics Express|October 20, 2015
InGaP/GaAs heterojunction phototransistors transferred to a Si substrate by metal wafer bonding combined with epitaxial lift-offMin-Su Park, Dae-Myeong Geum, Ji Hoon Kyhm, et al.ACS Omega|August 30, 2019
Erratum: High-Quality 100 nm Thick InSb Films Grown on GaAs(001) Substrates with an In Al1- Sb Continuously Graded Buffer LayerSoo Seok Kang, Suk In Park, Sang Hoon Shin, et al.ACS Omega|August 29, 2019
High-Quality 100 nm Thick InSb Films Grown on GaAs(001) Substrates with an In Al1- Sb Continuously Graded Buffer LayerSoo Seok Kang, Suk In Park, Sang Hoon Shin, et al.Pageof 5