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ACS Nano
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July 23, 2019
Recent Advances in Interface Engineering of Transition-Metal Dichalcogenides with Organic Molecules and Polymers
Kyungjune Cho, Jinsu Pak, Seungjun Chung, et al.
Journal of Physics. Condensed Matter : an Institute of Physics Journal
|
April 9, 2016
Tailoring the electrical properties of MoS2 field effect transistors by depositing Au nanoparticles and alkanethiol molecules
Kyungjune Cho, Hyunhak Jeong, Tae-Young Kim, et al.
Nanoscale Research Letters
|
September 14, 2019
Effect of Facile p-Doping on Electrical and Optoelectronic Characteristics of Ambipolar WSe<sub>2</sub> Field-Effect Transistors
Junseok Seo, Kyungjune Cho, Woocheol Lee, et al.
Advanced Materials (Deerfield Beach, Fla.)
|
March 25, 2018
Contact-Engineered Electrical Properties of MoS<sub>2</sub> Field-Effect Transistors via Selectively Deposited Thiol-Molecules
Kyungjune Cho, Jinsu Pak, Jae-Keun Kim, et al.
Nanotechnology
|
October 11, 2017
Analysis of noise generation and electric conduction at grain boundaries in CVD-grown MoS<sub>2</sub> field effect transistors
Jae-Keun Kim, Younggul Song, Tae-Young Kim, et al.
ACS Nano
|
August 26, 2017
Transparent Large-Area MoS<sub>2</sub> Phototransistors with Inkjet-Printed Components on Flexible Platforms
Tae-Young Kim, Jewook Ha, Kyungjune Cho, et al.
Nanoscale
|
October 28, 2015
Enhancement of photodetection characteristics of MoS2 field effect transistors using surface treatment with copper phthalocyanine
Jinsu Pak, Jingon Jang, Kyungjune Cho, et al.
Nanotechnology
|
March 10, 2017
Analysis of the interface characteristics of CVD-grown monolayer MoS<sub>2</sub> by noise measurements
Tae-Young Kim, Younggul Song, Kyungjune Cho, et al.
Nanoscale
|
July 16, 2019
Dose-dependent effect of proton irradiation on electrical properties of WSe<sub>2</sub> ambipolar field effect transistors
Jiwon Shin, Kyungjune Cho, Tae-Young Kim, et al.
ACS Nano
|
June 29, 2018
Two-Dimensional Thickness-Dependent Avalanche Breakdown Phenomena in MoS<sub>2</sub> Field-Effect Transistors under High Electric Fields
Jinsu Pak, Yeonsik Jang, Junghwan Byun, et al.
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Search research articles
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Showing results (1-10 of 15) with videos related to
Sort By:
Page
of 2
ACS Nano
|
July 23, 2019
Recent Advances in Interface Engineering of Transition-Metal Dichalcogenides with Organic Molecules and Polymers
Kyungjune Cho, Jinsu Pak, Seungjun Chung, et al.
Journal of Physics. Condensed Matter : an Institute of Physics Journal
|
April 9, 2016
Tailoring the electrical properties of MoS2 field effect transistors by depositing Au nanoparticles and alkanethiol molecules
Kyungjune Cho, Hyunhak Jeong, Tae-Young Kim, et al.
Nanoscale Research Letters
|
September 14, 2019
Effect of Facile p-Doping on Electrical and Optoelectronic Characteristics of Ambipolar WSe<sub>2</sub> Field-Effect Transistors
Junseok Seo, Kyungjune Cho, Woocheol Lee, et al.
Advanced Materials (Deerfield Beach, Fla.)
|
March 25, 2018
Contact-Engineered Electrical Properties of MoS<sub>2</sub> Field-Effect Transistors via Selectively Deposited Thiol-Molecules
Kyungjune Cho, Jinsu Pak, Jae-Keun Kim, et al.
Nanotechnology
|
October 11, 2017
Analysis of noise generation and electric conduction at grain boundaries in CVD-grown MoS<sub>2</sub> field effect transistors
Jae-Keun Kim, Younggul Song, Tae-Young Kim, et al.
ACS Nano
|
August 26, 2017
Transparent Large-Area MoS<sub>2</sub> Phototransistors with Inkjet-Printed Components on Flexible Platforms
Tae-Young Kim, Jewook Ha, Kyungjune Cho, et al.
Nanoscale
|
October 28, 2015
Enhancement of photodetection characteristics of MoS2 field effect transistors using surface treatment with copper phthalocyanine
Jinsu Pak, Jingon Jang, Kyungjune Cho, et al.
Nanotechnology
|
March 10, 2017
Analysis of the interface characteristics of CVD-grown monolayer MoS<sub>2</sub> by noise measurements
Tae-Young Kim, Younggul Song, Kyungjune Cho, et al.
Nanoscale
|
July 16, 2019
Dose-dependent effect of proton irradiation on electrical properties of WSe<sub>2</sub> ambipolar field effect transistors
Jiwon Shin, Kyungjune Cho, Tae-Young Kim, et al.
ACS Nano
|
June 29, 2018
Two-Dimensional Thickness-Dependent Avalanche Breakdown Phenomena in MoS<sub>2</sub> Field-Effect Transistors under High Electric Fields
Jinsu Pak, Yeonsik Jang, Junghwan Byun, et al.
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