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Joe Salfi

Showing results (1-10 of 11) with videos related to

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Nanotechnology|May 13, 2016
Quantum computing with acceptor spins in siliconJoe Salfi, Mengyang Tong, Sven Rogge, et al.
Physical Review Letters|July 2, 2016
Charge-Insensitive Single-Atom Spin-Orbit Qubit in SiliconJoe Salfi, Jan A Mol, Dimitrie Culcer, et al.
Nanoscale|October 31, 2017
Towards visualisation of central-cell-effects in scanning tunnelling microscope images of subsurface dopant qubits in siliconMuhammad Usman, Benoit Voisin, Joe Salfi, et al.
ACS Nano|June 9, 2020
Scanned Single-Electron Probe inside a Silicon Electronic DeviceKevin S H Ng, Benoit Voisin, Brett C Johnson, et al.
Journal of Physics. Condensed Matter : an Institute of Physics Journal|March 19, 2015
Donor hyperfine Stark shift and the role of central-cell corrections in tight-binding theoryMuhammad Usman, Rajib Rahman, Joe Salfi, et al.
Science Advances|December 13, 2018
Readout and control of the spin-orbit states of two coupled acceptor atoms in a silicon transistorJoost van der Heijden, Takashi Kobayashi, Matthew G House, et al.
ACS Nano|February 17, 2011
Probing the gate--voltage-dependent surface potential of individual InAs nanowires using random telegraph signalsJoe Salfi, Nicola Paradiso, Stefano Roddaro, et al.
Nano Letters|February 28, 2014
Probing the spin states of a single acceptor atomJoost van der Heijden, Joe Salfi, Jan A Mol, et al.
Optics Express|May 13, 2011
Electrical characteristics and photocurrent spectral response of Si nanowires p-i-n junctionsYongshun Sun, Rusli, Mingbin Yu, et al.
Advanced Science (Weinheim, Baden-Wurttemberg, Germany)|February 16, 2026
Nuclear Spin-Free <sup>70</sup>Ge/<sup>28</sup>Si<sup>70</sup>Ge Quantum Well Heterostructures Grown on Industrial SiGe-Buffered WafersPatrick Daoust, Nicolas Rotaru, Debojyoti Biswas, et al.
Pageof 2

Showing results (1-10 of 11) with videos related to

Sort By:
Pageof 2
Nanotechnology|May 13, 2016
Quantum computing with acceptor spins in siliconJoe Salfi, Mengyang Tong, Sven Rogge, et al.
Physical Review Letters|July 2, 2016
Charge-Insensitive Single-Atom Spin-Orbit Qubit in SiliconJoe Salfi, Jan A Mol, Dimitrie Culcer, et al.
Nanoscale|October 31, 2017
Towards visualisation of central-cell-effects in scanning tunnelling microscope images of subsurface dopant qubits in siliconMuhammad Usman, Benoit Voisin, Joe Salfi, et al.
ACS Nano|June 9, 2020
Scanned Single-Electron Probe inside a Silicon Electronic DeviceKevin S H Ng, Benoit Voisin, Brett C Johnson, et al.
Journal of Physics. Condensed Matter : an Institute of Physics Journal|March 19, 2015
Donor hyperfine Stark shift and the role of central-cell corrections in tight-binding theoryMuhammad Usman, Rajib Rahman, Joe Salfi, et al.
Science Advances|December 13, 2018
Readout and control of the spin-orbit states of two coupled acceptor atoms in a silicon transistorJoost van der Heijden, Takashi Kobayashi, Matthew G House, et al.
ACS Nano|February 17, 2011
Probing the gate--voltage-dependent surface potential of individual InAs nanowires using random telegraph signalsJoe Salfi, Nicola Paradiso, Stefano Roddaro, et al.
Nano Letters|February 28, 2014
Probing the spin states of a single acceptor atomJoost van der Heijden, Joe Salfi, Jan A Mol, et al.
Optics Express|May 13, 2011
Electrical characteristics and photocurrent spectral response of Si nanowires p-i-n junctionsYongshun Sun, Rusli, Mingbin Yu, et al.
Advanced Science (Weinheim, Baden-Wurttemberg, Germany)|February 16, 2026
Nuclear Spin-Free <sup>70</sup>Ge/<sup>28</sup>Si<sup>70</sup>Ge Quantum Well Heterostructures Grown on Industrial SiGe-Buffered WafersPatrick Daoust, Nicolas Rotaru, Debojyoti Biswas, et al.
Pageof 2