Jove
Visualize
Contact Us
JoVE
x logofacebook logolinkedin logoyoutube logo
ABOUT JoVE
OverviewLeadershipBlogJoVE Help Center
AUTHORS
Publishing ProcessEditorial BoardScope & PoliciesPeer ReviewFAQSubmit
LIBRARIANS
TestimonialsSubscriptionsAccessResourcesLibrary Advisory BoardFAQ
RESEARCH
JoVE JournalMethods CollectionsJoVE Encyclopedia of ExperimentsArchive
EDUCATION
JoVE CoreJoVE BusinessJoVE Science EducationJoVE Lab ManualFaculty Resource CenterFaculty Site
Terms & Conditions of Use
Privacy Policy
Policies

Related Concept Videos

Scanning Electron Microscopy01:07

Scanning Electron Microscopy

5.1K
A scanning electron microscope (SEM) is used to study the surface features of a sample by using an electron beam that scans the sample surface in a two-dimensional manner. Typically, areas between ~1 centimeter to 5 micrometers in width can be imaged. SEM can be used to image bacteria, viruses, tissues as well as larger samples like insects. Conventional SEM gives a magnification ranging from 20X to 30,000X and spatial resolution of 50 to 100 nanometers.
Fundamental Principles
Accelerated...
5.1K
Overview of Microscopy Techniques01:22

Overview of Microscopy Techniques

14.5K
The early pioneers of microscopy opened a window into the invisible world of microorganisms. In 1830, Joseph Jackson Lister created an essentially modern light microscope. The 20th century saw the development of microscopes that leveraged nonvisible light, such as fluorescence microscopy that uses an ultraviolet light source and electron microscopy that uses short-wavelength electron beams. These advances significantly improved magnification, image resolution, and contrast. By comparison, the...
14.5K
Atomic Force Microscopy01:08

Atomic Force Microscopy

4.2K
Atomic force microscopy (AFM) is a type of scanning probe microscopy that can analyze topographic details of various specimens like ceramics, glass, polymers, and biological samples. AFM offers over 1000 times more resolution than the optical imaging system. Images generated from AFM are three-dimensional surface profiles, offering an advantage over the flat, two-dimensional images from other imaging techniques.
The AFM Probe
The probe is regarded as the heart of any AFM setup and comprises the...
4.2K

You might also read

Related Articles

Articles linked to this work by shared authors, journal, and citation graph.

Sort by
Same author

Coupling a ^{73}Ge Nuclear Spin to an Electrostatically Defined Quantum Dot in Silicon.

Physical review letters·2026
Same author

Imaging Magnetic Switching in Orthogonally Twisted Stacks of a van der Waals Antiferromagnet.

ACS nano·2025
Same author

Strong coupling of a superconducting flux qubit to single bismuth donors.

Nature communications·2025
Same author

Scalable entanglement of nuclear spins mediated by electron exchange.

Science (New York, N.Y.)·2025
Same author

Electronic Spin Relaxation and Clustering in High Pressure High Temperature Synthesized Microcrystalline Diamond Particles with Reduced Nitrogen Content.

The journal of physical chemistry. C, Nanomaterials and interfaces·2025
Same author

Strain-Dependent Photodetection with Layered InSe Photoconductors.

Nano letters·2025

Related Experiment Video

Updated: Dec 19, 2025

Scanning-probe Single-electron Capacitance Spectroscopy
10:53

Scanning-probe Single-electron Capacitance Spectroscopy

Published on: July 30, 2013

13.3K

Scanned Single-Electron Probe inside a Silicon Electronic Device.

Kevin S H Ng1,2, Benoit Voisin1, Brett C Johnson3

  • 1Centre for Quantum Computation and Communication Technology, School of Physics, The University of New South Wales, Sydney, New South Wales 2052, Australia.

ACS Nano
|June 9, 2020
PubMed
Summary

Researchers probed atomic-scale silicon devices using a quantum dot. This method allows precise control and probing of electric fields and charges in defects, advancing quantum technology development.

Keywords:
donor devicesquantum dotsscanning tunneling spectroscopysilicon

More Related Videos

Probing C84-embedded Si Substrate Using Scanning Probe Microscopy and Molecular Dynamics
13:58

Probing C84-embedded Si Substrate Using Scanning Probe Microscopy and Molecular Dynamics

Published on: September 28, 2016

12.1K
All-electronic Nanosecond-resolved Scanning Tunneling Microscopy: Facilitating the Investigation of Single Dopant Charge Dynamics
11:33

All-electronic Nanosecond-resolved Scanning Tunneling Microscopy: Facilitating the Investigation of Single Dopant Charge Dynamics

Published on: January 19, 2018

10.1K

Related Experiment Videos

Last Updated: Dec 19, 2025

Scanning-probe Single-electron Capacitance Spectroscopy
10:53

Scanning-probe Single-electron Capacitance Spectroscopy

Published on: July 30, 2013

13.3K
Probing C84-embedded Si Substrate Using Scanning Probe Microscopy and Molecular Dynamics
13:58

Probing C84-embedded Si Substrate Using Scanning Probe Microscopy and Molecular Dynamics

Published on: September 28, 2016

12.1K
All-electronic Nanosecond-resolved Scanning Tunneling Microscopy: Facilitating the Investigation of Single Dopant Charge Dynamics
11:33

All-electronic Nanosecond-resolved Scanning Tunneling Microscopy: Facilitating the Investigation of Single Dopant Charge Dynamics

Published on: January 19, 2018

10.1K

Area of Science:

  • Solid-state physics
  • Quantum information science
  • Nanotechnology

Background:

  • Atomic-scale solid-state devices are crucial for classical logic, current standards, and quantum technologies.
  • Probing these devices and their quantum states at the atomic scale is challenging due to reliance on long-ranged capacitive interactions.

Purpose of the Study:

  • To develop a method for probing atomic-scale silicon electronic devices at the atomic scale.
  • To demonstrate control over quantum dot interactions and energy levels within the device.
  • To utilize the quantum dot as a probe for electric fields and charges in individual defects.

Main Methods:

  • Induced a localized electronic quantum dot within the silicon device using the biased tip of a low-temperature scanning tunneling microscope (STM).
  • Achieved sub-nanometer position control of the STM tip to manipulate the tunnel coupling between the quantum dot and the device's source reservoir.
  • Applied voltage to the device's gate reservoir to control the quantum dot's energy level, demonstrating significant electric control despite the quantum dot's proximity to the STM tip.

Main Results:

  • Demonstrated precise control over the quantum dot's coupling to the source reservoir and its energy level.
  • Showcased the quantum dot's utility in probing applied electric fields and charge distributions in individual defects within the silicon device.
  • Confirmed that the gate provides sufficient capacitance for high-degree electric control even with the quantum dot approximately 1 nm from the metallic STM tip.

Conclusions:

  • The developed quantum dot probing technique enables atomic-scale characterization of solid-state devices.
  • This method facilitates a deeper understanding of quantum states within atomic-scale devices.
  • The capability is expected to significantly aid in the design and understanding of future quantum technologies and atomic-scale electronic devices.