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Strain-Dependent Photodetection with Layered InSe Photoconductors.

Luke Philpott1, Brett C Johnson2, Marco Fronzi3,4

  • 1Department of Electrical and Electronic Engineering, University of Melbourne, Parkville, VIC 3010, Australia.

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|June 3, 2025
PubMed
Summary
This summary is machine-generated.

Strain engineering in indium selenide (InSe) flexible photoconductors enables tunable bandgaps for advanced optoelectronics. This research highlights significant bandgap shifts and high device performance, paving the way for reconfigurable optical applications.

Keywords:
2D materialsInSebandgap engineeringflexible devicesstrain tuning

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Area of Science:

  • Materials Science
  • Condensed Matter Physics
  • Optoelectronics

Background:

  • Controlled bandgap modulation is crucial for next-generation optoelectronic devices.
  • Van der Waals layered semiconductors offer high strain tolerance for bandgap tuning.
  • Strain engineering is a key method for achieving active bandgap modulation.

Purpose of the Study:

  • To demonstrate a flexible bulk indium selenide (InSe) gated photoconductor.
  • To investigate strain-induced modulation of the bandgap energy in InSe.
  • To characterize the optoelectronic performance of strain-engineered InSe devices.

Main Methods:

  • Fabrication of flexible bulk InSe gated photoconductors.
  • Application of tensile and compressive strain to modulate the bandgap.
  • Photoluminescence (PL) measurements to quantify bandgap shifts.
  • Spectral responsivity measurements to assess device performance.

Main Results:

  • Demonstrated strain-induced bandgap modulation in InSe, shifting to higher energies under compression and lower energies under tension.
  • Photoluminescence measurements showed significant shift rates: ~117.1 meV·%⁻¹ in tension and ~107.6 meV·%⁻¹ in compression.
  • Flexible InSe photoconductors achieved high specific detectivities (up to 3.78 × 10¹² cm·Hz¹/²·W⁻¹), fast rise times (4.1 μs), and high responsivity (1.25 × 10³ A·W⁻¹).

Conclusions:

  • Strain engineering effectively tunes the bandgap of flexible InSe photoconductors.
  • The demonstrated device architecture shows potential for high-performance, reconfigurable optoelectronic applications.
  • High responsivity and fast response times highlight the suitability for advanced optical sensing and emission.