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John L Lyons

Showing results (1-10 of 19) with videos related to

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Journal of Physics. Condensed Matter : an Institute of Physics Journal|November 6, 2023
A<i>p</i>-type dopable ultrawide-bandgap oxideJohn L Lyons, Anderson Janotti
ACS Applied Materials & Interfaces|May 24, 2018
Atomic Layer Epitaxy of Aluminum Nitride: Unraveling the Connection between Hydrogen Plasma and Carbon ContaminationSteven C Erwin, John L Lyons
Journal of Physics. Condensed Matter : an Institute of Physics Journal|April 9, 2025
Deep chalcogen donors and electron localization in aluminum nitrideJohn L Lyons, Joel B Varley
ACS Applied Materials & Interfaces|October 16, 2020
Atomic Layer Epitaxy of III-Nitrides: A Microscopic Model of Homoepitaxial GrowthSteven C Erwin, John L Lyons
ACS Nano|February 24, 2026
Machine Learning Phonon Spectra for Fast and Accurate Optical Lineshapes of DefectsMark E Turiansky, John L Lyons, Noam Bernstein
Physical Review Letters|May 17, 2012
Shallow versus deep nature of Mg acceptors in nitride semiconductorsJohn L Lyons, Anderson Janotti, Chris G Van de Walle
The Journal of Chemical Physics|December 23, 2019
Quasicubic model for metal halide perovskite nanocrystalsPeter C Sercel, John L Lyons, Noam Bernstein, et al.
Nanoscale|October 4, 2021
Rashba exciton in a 2D perovskite quantum dotMichael W Swift, John L Lyons, Alexander L Efros, et al.
Physical Review Letters|February 2, 2013
First-principles calculations of luminescence spectrum line shapes for defects in semiconductors: the example of GaN and ZnOAudrius Alkauskas, John L Lyons, Daniel Steiauf, et al.
Nanoscale|November 25, 2021
Correction: Rashba exciton in a 2D perovskite quantum dotMichael W Swift, John L Lyons, Alexander L Efros, et al.
Pageof 2

Showing results (1-10 of 19) with videos related to

Sort By:
Pageof 2
Journal of Physics. Condensed Matter : an Institute of Physics Journal|November 6, 2023
A<i>p</i>-type dopable ultrawide-bandgap oxideJohn L Lyons, Anderson Janotti
ACS Applied Materials & Interfaces|May 24, 2018
Atomic Layer Epitaxy of Aluminum Nitride: Unraveling the Connection between Hydrogen Plasma and Carbon ContaminationSteven C Erwin, John L Lyons
Journal of Physics. Condensed Matter : an Institute of Physics Journal|April 9, 2025
Deep chalcogen donors and electron localization in aluminum nitrideJohn L Lyons, Joel B Varley
ACS Applied Materials & Interfaces|October 16, 2020
Atomic Layer Epitaxy of III-Nitrides: A Microscopic Model of Homoepitaxial GrowthSteven C Erwin, John L Lyons
ACS Nano|February 24, 2026
Machine Learning Phonon Spectra for Fast and Accurate Optical Lineshapes of DefectsMark E Turiansky, John L Lyons, Noam Bernstein
Physical Review Letters|May 17, 2012
Shallow versus deep nature of Mg acceptors in nitride semiconductorsJohn L Lyons, Anderson Janotti, Chris G Van de Walle
The Journal of Chemical Physics|December 23, 2019
Quasicubic model for metal halide perovskite nanocrystalsPeter C Sercel, John L Lyons, Noam Bernstein, et al.
Nanoscale|October 4, 2021
Rashba exciton in a 2D perovskite quantum dotMichael W Swift, John L Lyons, Alexander L Efros, et al.
Physical Review Letters|February 2, 2013
First-principles calculations of luminescence spectrum line shapes for defects in semiconductors: the example of GaN and ZnOAudrius Alkauskas, John L Lyons, Daniel Steiauf, et al.
Nanoscale|November 25, 2021
Correction: Rashba exciton in a 2D perovskite quantum dotMichael W Swift, John L Lyons, Alexander L Efros, et al.
Pageof 2