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Joonggyu Kim

Showing results (1-10 of 5) with videos related to

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ACS Applied Materials & Interfaces|January 5, 2019
Low-Voltage-Operated Highly Sensitive Graphene Hall Elements by Ionic GatingJoonggyu Kim, Junhong Na, Min-Kyu Joo, et al.
Advanced Materials (Deerfield Beach, Fla.)|August 22, 2015
A Van Der Waals Homojunction: Ideal p-n Diode Behavior in MoSe2Youngjo Jin, Dong Hoon Keum, Sung-Jin An, et al.
ACS Nano|September 1, 2016
Large-Scale Graphene on Hexagonal-BN Hall Elements: Prediction of Sensor Performance without Magnetic FieldMin-Kyu Joo, Joonggyu Kim, Ji-Hoon Park, et al.
Nanotechnology|August 6, 2015
Quantum Hall conductance of graphene combined with charge-trap memory operationHaeyong Kang, Yoojoo Yun, Jeongmin Park, et al.
ACS Applied Materials & Interfaces|July 18, 2019
Temperature-Dependent Opacity of the Gate Field Inside MoS<sub>2</sub> Field-Effect TransistorsHyunjin Ji, Mohan Kumar Ghimire, Gwanmu Lee, et al.
Pageof 1

Showing results (1-10 of 5) with videos related to

Sort By:
Pageof 1
ACS Applied Materials & Interfaces|January 5, 2019
Low-Voltage-Operated Highly Sensitive Graphene Hall Elements by Ionic GatingJoonggyu Kim, Junhong Na, Min-Kyu Joo, et al.
Advanced Materials (Deerfield Beach, Fla.)|August 22, 2015
A Van Der Waals Homojunction: Ideal p-n Diode Behavior in MoSe2Youngjo Jin, Dong Hoon Keum, Sung-Jin An, et al.
ACS Nano|September 1, 2016
Large-Scale Graphene on Hexagonal-BN Hall Elements: Prediction of Sensor Performance without Magnetic FieldMin-Kyu Joo, Joonggyu Kim, Ji-Hoon Park, et al.
Nanotechnology|August 6, 2015
Quantum Hall conductance of graphene combined with charge-trap memory operationHaeyong Kang, Yoojoo Yun, Jeongmin Park, et al.
ACS Applied Materials & Interfaces|July 18, 2019
Temperature-Dependent Opacity of the Gate Field Inside MoS<sub>2</sub> Field-Effect TransistorsHyunjin Ji, Mohan Kumar Ghimire, Gwanmu Lee, et al.
Pageof 1