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Joseph S Friedman

Showing results (1-10 of 6) with videos related to

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Scientific Reports|April 3, 2020
Exploiting Dual-Gate Ambipolar CNFETs for Scalable Machine Learning ClassificationFarid Kenarangi, Xuan Hu, Yihan Liu, et al.
Communications Engineering|August 4, 2025
Neuromorphic Hebbian learning with magnetic tunnel junction synapsesPeng Zhou, Alexander J Edwards, Frederick B Mancoff, et al.
Nanotechnology|April 7, 2020
Maximized lateral inhibition in paired magnetic domain wall racetracks for neuromorphic computingCan Cui, Otitoaleke G Akinola, Naimul Hassan, et al.
ACS Nano|June 28, 2023
Cascaded Logic Gates Based on High-Performance Ambipolar Dual-Gate WSe<sub>2</sub> Thin Film TransistorsXintong Li, Peng Zhou, Xuan Hu, et al.
Nature Communications|June 6, 2017
Cascaded spintronic logic with low-dimensional carbonJoseph S Friedman, Anuj Girdhar, Ryan M Gelfand, et al.
Nano Letters|January 23, 2025
Cross-Point Ferroelectric Hf<sub>0.5</sub>Zr<sub>0.5</sub>O<sub>2</sub> Capacitors for Remanent Polarization-Driven In-Memory ComputingMinjong Lee, Peng Zhou, Heber Hernandez-Arriaga, et al.
Pageof 1

Showing results (1-10 of 6) with videos related to

Sort By:
Pageof 1
Scientific Reports|April 3, 2020
Exploiting Dual-Gate Ambipolar CNFETs for Scalable Machine Learning ClassificationFarid Kenarangi, Xuan Hu, Yihan Liu, et al.
Communications Engineering|August 4, 2025
Neuromorphic Hebbian learning with magnetic tunnel junction synapsesPeng Zhou, Alexander J Edwards, Frederick B Mancoff, et al.
Nanotechnology|April 7, 2020
Maximized lateral inhibition in paired magnetic domain wall racetracks for neuromorphic computingCan Cui, Otitoaleke G Akinola, Naimul Hassan, et al.
ACS Nano|June 28, 2023
Cascaded Logic Gates Based on High-Performance Ambipolar Dual-Gate WSe<sub>2</sub> Thin Film TransistorsXintong Li, Peng Zhou, Xuan Hu, et al.
Nature Communications|June 6, 2017
Cascaded spintronic logic with low-dimensional carbonJoseph S Friedman, Anuj Girdhar, Ryan M Gelfand, et al.
Nano Letters|January 23, 2025
Cross-Point Ferroelectric Hf<sub>0.5</sub>Zr<sub>0.5</sub>O<sub>2</sub> Capacitors for Remanent Polarization-Driven In-Memory ComputingMinjong Lee, Peng Zhou, Heber Hernandez-Arriaga, et al.
Pageof 1