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Physical Review Letters|January 15, 2011
Design principles and coupling mechanisms in the 2D quantum well topological insulator HgTe/CdTeJun-Wei Luo, Alex ZungerNano Letters|August 30, 2008
Carrier multiplication in semiconductor nanocrystals: theoretical screening of candidate materials based on band-structure effectsJun-Wei Luo, Alberto Franceschetti, Alex ZungerPhysical Review Letters|March 5, 2009
Full-zone spin splitting for electrons and holes in bulk GaAs and GaSbJun-Wei Luo, Gabriel Bester, Alex ZungerNano Letters|July 9, 2009
Direct-bandgap InAs quantum-dots have long-range electron-hole exchange whereas indirect gap Si dots have short-range exchangeJun-Wei Luo, Alberto Franceschetti, Alex ZungerScience Advances|December 15, 2023
Light-induced ultrafast spin transport in multilayer metallic films originates from sp-d spin exchange couplingZhanghui Chen, Jun-Wei Luo, Lin-Wang WangACS Applied Materials & Interfaces|April 18, 2019
Design Principles of p-Type Transparent Conductive MaterialsRuyue Cao, Hui-Xiong Deng, Jun-Wei LuoProceedings of the National Academy of Sciences of the United States of America|September 11, 2019
Revealing angular momentum transfer channels and timescales in the ultrafast demagnetization process of ferromagnetic semiconductorsZhanghui Chen, Jun-Wei Luo, Lin-Wang WangPhysical Review Letters|January 18, 2018
Rapid Transition of the Hole Rashba Effect from Strong Field Dependence to Saturation in Semiconductor NanowiresJun-Wei Luo, Shu-Shen Li, Alex ZungerNature Communications|November 27, 2025
Self-passivation reduces the Fermi level pinning in the metal-semiconductor contactsZiying Xiang, Jun-Wei Luo, Shu-Shen LiNature Communications|January 19, 2024
Direct bandgap emission from strain-doped germaniumLin-Ding Yuan, Shu-Shen Li, Jun-Wei LuoPageof 5