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Updated: Jun 21, 2026

Nanofabrication of Gate-defined GaAs/AlGaAs Lateral Quantum Dots
15:47

Nanofabrication of Gate-defined GaAs/AlGaAs Lateral Quantum Dots

Published on: November 1, 2013

Direct-bandgap InAs quantum-dots have long-range electron-hole exchange whereas indirect gap Si dots have short-range

Jun-Wei Luo1, Alberto Franceschetti, Alex Zunger

  • 1National Renewable Energy Laboratory, Golden, Colorado 80401, USA.

Nano Letters
|July 9, 2009
PubMed

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