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Nano Letters|August 30, 2008
Carrier multiplication in semiconductor nanocrystals: theoretical screening of candidate materials based on band-structure effectsJun-Wei Luo, Alberto Franceschetti, Alex ZungerNano Letters|July 9, 2009
Direct-bandgap InAs quantum-dots have long-range electron-hole exchange whereas indirect gap Si dots have short-range exchangeJun-Wei Luo, Alberto Franceschetti, Alex ZungerNano Letters|December 15, 2005
Temperature dependence of excitonic radiative decay in CdSe quantum dots: the role of surface hole trapsMarco Califano, Alberto Franceschetti, Alex ZungerPhysical Review Letters|January 15, 2011
Design principles and coupling mechanisms in the 2D quantum well topological insulator HgTe/CdTeJun-Wei Luo, Alex ZungerPhysical Review Letters|August 9, 2003
Pseudopotential theory of Auger processes in CdSe quantum dotsLin-Wang Wang, Marco Califano, Alex Zunger, et al.The Journal of Chemical Physics|May 2, 2008
Excited-state relaxation in PbSe quantum dotsJoonhee M An, Marco Califano, Alberto Franceschetti, et al.Physical Review Letters|March 5, 2009
Full-zone spin splitting for electrons and holes in bulk GaAs and GaSbJun-Wei Luo, Gabriel Bester, Alex ZungerPhysical Review Letters|January 18, 2018
Rapid Transition of the Hole Rashba Effect from Strong Field Dependence to Saturation in Semiconductor NanowiresJun-Wei Luo, Shu-Shen Li, Alex ZungerNano Letters|December 2, 2014
Reinterpretation of the expected electronic density of states of semiconductor nanowiresJianping Wang, Jun-Wei Luo, Lijun Zhang, et al.Physical Review Letters|February 14, 2012
Genetic-algorithm discovery of a direct-gap and optically allowed superstructure from indirect-gap Si and Ge semiconductorsMayeul d'Avezac, Jun-Wei Luo, Thomas Chanier, et al.Pageof 11