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Updated: May 25, 2026

Theoretical Calculation and Experimental Verification for Dislocation Reduction in Germanium Epitaxial Layers with Semicylindrical Voids on Silicon
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Theoretical Calculation and Experimental Verification for Dislocation Reduction in Germanium Epitaxial Layers with Semicylindrical Voids on Silicon

Published on: July 17, 2020

Genetic-algorithm discovery of a direct-gap and optically allowed superstructure from indirect-gap Si and Ge

Mayeul d'Avezac1, Jun-Wei Luo, Thomas Chanier

  • 1National Renewable Energy Laboratory, Golden, Colorado 80401, USA.

Physical Review Letters
|February 14, 2012
PubMed

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