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Nanoscale Research Letters
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September 27, 2017
UV-Cured Inkjet-Printed Silver Gate Electrode with Low Electrical Resistivity
Honglong Ning, Yicong Zhou, Zhiqiang Fang, et al.
Light, Science & Applications
|
January 26, 2026
Ultrahigh-radiance TTA-based OLED with 13 kA cm<sup>-</sup><sup>2</sup> current injection
Jichen Zhao, Yu Mao, Wansheng Liu, et al.
ACS Applied Materials & Interfaces
|
January 15, 2019
Trap-Assisted Enhanced Bias Illumination Stability of Oxide Thin Film Transistor by Praseodymium Doping
Hua Xu, Miao Xu, Min Li, et al.
Chemical Science
|
November 25, 2021
Converting molecular luminescence to ultralong room-temperature phosphorescence <i>via</i> the excited state modulation of sulfone-containing heteroaromatics
Zetong Ma, Zhiqiang Yang, Lan Mu, et al.
ACS Applied Materials & Interfaces
|
March 29, 2023
High-Performance Solar-Blind UV Phototransistors Based on ZnO/Ga<sub>2</sub>O<sub>3</sub> Heterojunction Channels
Yaping Li, Caihao Deng, Bo Huang, et al.
Materials Horizons
|
June 16, 2026
Highly conductive and flexible Ag NWs/PBFDO:PEOx composite transparent electrodes enabling efficient interfacial tunneling injection for OLEDs
Jiamin Sun, Guancheng Zhu, Zishuo Xu, et al.
ACS Nano
|
January 25, 2018
Highly Efficient All-Solution Processed Inverted Quantum Dots Based Light Emitting Diodes
Yu Liu, Congbiao Jiang, Chen Song, et al.
ACS Applied Materials & Interfaces
|
August 25, 2021
Inkjet-Printed Full-Color Matrix Quasi-Two-Dimensional Perovskite Light-Emitting Diodes
Junjie Wang, Danyang Li, Lan Mu, et al.
Materials (Basel, Switzerland)
|
August 5, 2017
Effect of Intrinsic Stress on Structural and Optical Properties of Amorphous Si-Doped SnO₂ Thin-Film
Honglong Ning, Xianzhe Liu, Hongke Zhang, et al.
Materials (Basel, Switzerland)
|
August 5, 2017
All-Aluminum Thin Film Transistor Fabrication at Room Temperature
Rihui Yao, Zeke Zheng, Yong Zeng, et al.
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of 14
Search research articles
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Showing results (111-120 of 134) with videos related to
Sort By:
Page
of 14
Nanoscale Research Letters
|
September 27, 2017
UV-Cured Inkjet-Printed Silver Gate Electrode with Low Electrical Resistivity
Honglong Ning, Yicong Zhou, Zhiqiang Fang, et al.
Light, Science & Applications
|
January 26, 2026
Ultrahigh-radiance TTA-based OLED with 13 kA cm<sup>-</sup><sup>2</sup> current injection
Jichen Zhao, Yu Mao, Wansheng Liu, et al.
ACS Applied Materials & Interfaces
|
January 15, 2019
Trap-Assisted Enhanced Bias Illumination Stability of Oxide Thin Film Transistor by Praseodymium Doping
Hua Xu, Miao Xu, Min Li, et al.
Chemical Science
|
November 25, 2021
Converting molecular luminescence to ultralong room-temperature phosphorescence <i>via</i> the excited state modulation of sulfone-containing heteroaromatics
Zetong Ma, Zhiqiang Yang, Lan Mu, et al.
ACS Applied Materials & Interfaces
|
March 29, 2023
High-Performance Solar-Blind UV Phototransistors Based on ZnO/Ga<sub>2</sub>O<sub>3</sub> Heterojunction Channels
Yaping Li, Caihao Deng, Bo Huang, et al.
Materials Horizons
|
June 16, 2026
Highly conductive and flexible Ag NWs/PBFDO:PEOx composite transparent electrodes enabling efficient interfacial tunneling injection for OLEDs
Jiamin Sun, Guancheng Zhu, Zishuo Xu, et al.
ACS Nano
|
January 25, 2018
Highly Efficient All-Solution Processed Inverted Quantum Dots Based Light Emitting Diodes
Yu Liu, Congbiao Jiang, Chen Song, et al.
ACS Applied Materials & Interfaces
|
August 25, 2021
Inkjet-Printed Full-Color Matrix Quasi-Two-Dimensional Perovskite Light-Emitting Diodes
Junjie Wang, Danyang Li, Lan Mu, et al.
Materials (Basel, Switzerland)
|
August 5, 2017
Effect of Intrinsic Stress on Structural and Optical Properties of Amorphous Si-Doped SnO₂ Thin-Film
Honglong Ning, Xianzhe Liu, Hongke Zhang, et al.
Materials (Basel, Switzerland)
|
August 5, 2017
All-Aluminum Thin Film Transistor Fabrication at Room Temperature
Rihui Yao, Zeke Zheng, Yong Zeng, et al.
Page
of 14