Jove
Visualize
Contact Us
JoVE
x logofacebook logolinkedin logoyoutube logo
ABOUT JoVE
OverviewLeadershipBlogJoVE Help Center
AUTHORS
Publishing ProcessEditorial BoardScope & PoliciesPeer ReviewFAQSubmit
LIBRARIANS
TestimonialsSubscriptionsAccessResourcesLibrary Advisory BoardFAQ
RESEARCH
JoVE JournalMethods CollectionsJoVE Encyclopedia of ExperimentsArchive
EDUCATION
JoVE CoreJoVE BusinessJoVE Science EducationJoVE Lab ManualFaculty Resource CenterFaculty Site
Terms & Conditions of Use
Privacy Policy
Policies

Filters

Jungmoon Lim

Showing results (1-10 of 11) with videos related to

Pageof 2
Sort By:
Nanotechnology|April 15, 2022
Shift of switching threshold in low-dimensional semiconductor-based complementary inverters via inkjet printingSeoyeon Jung, Jihyun Lee, Juhee Park, et al.
ACS Applied Materials & Interfaces|March 11, 2022
Electromagnetic Interference Shielding with 2D Copper SulfideTaehun Kim, Sangyeon Pak, Jungmoon Lim, et al.
Nanoscale|September 2, 2025
Non-volatile resistive switching characteristics in Cu<sub>2-<i>x</i></sub>S-based memristorSeungsub Lee, Junsung Byeon, Sohyeon Park, et al.
ACS Applied Materials & Interfaces|October 17, 2025
Short Channel 2D FET with Sloped ArchitectureJunsung Byeon, Jinhyeok Pyo, Jungmoon Lim, et al.
Small Methods|January 31, 2026
Intrinsic Charge Modulation Protocol for Low-Temperature TMDC SynthesisTaehun Kim, Junsung Byeon, Nahyun Lee, et al.
Small (Weinheim an Der Bergstrasse, Germany)|August 16, 2024
Highly Sustainable h-BN Encapsulated MoS<sub>2</sub> Hydrogen Evolution CatalystsJungmoon Lim, Su Jin Heo, Min Jung, et al.
Nano Letters|October 28, 2025
Strain-Dependent Contact Engineering in Monolayer MoS<sub>2</sub>: Enhancing Charge Carrier Transport through 1D Edge ContactsOnesik Harm, Junsung Byeon, Jungmoon Lim, et al.
Advanced Materials (Deerfield Beach, Fla.)|September 4, 2021
Electrode-Induced Self-Healed Monolayer MoS<sub>2</sub> for High Performance Transistors and PhototransistorsSangyeon Pak, Seunghun Jang, Taehun Kim, et al.
Nanotechnology|October 12, 2022
Facile one-pot iodine gas phase doping on 2D MoS<sub>2</sub>/CuS FET at room temperatureSangyeon Pak, Jiwon Son, Taehun Kim, et al.
Advanced Science (Weinheim, Baden-Wurttemberg, Germany)|May 22, 2024
Toward Ideal Low-Frequency Noise in Monolayer CVD MoS<sub>2</sub> FETs: Influence of van der Waals Junctions and Sulfur Vacancy ManagementWonjun Shin, Junsung Byeon, Ryun-Han Koo, et al.
Pageof 2

Showing results (1-10 of 11) with videos related to

Sort By:
Pageof 2
Nanotechnology|April 15, 2022
Shift of switching threshold in low-dimensional semiconductor-based complementary inverters via inkjet printingSeoyeon Jung, Jihyun Lee, Juhee Park, et al.
ACS Applied Materials & Interfaces|March 11, 2022
Electromagnetic Interference Shielding with 2D Copper SulfideTaehun Kim, Sangyeon Pak, Jungmoon Lim, et al.
Nanoscale|September 2, 2025
Non-volatile resistive switching characteristics in Cu<sub>2-<i>x</i></sub>S-based memristorSeungsub Lee, Junsung Byeon, Sohyeon Park, et al.
ACS Applied Materials & Interfaces|October 17, 2025
Short Channel 2D FET with Sloped ArchitectureJunsung Byeon, Jinhyeok Pyo, Jungmoon Lim, et al.
Small Methods|January 31, 2026
Intrinsic Charge Modulation Protocol for Low-Temperature TMDC SynthesisTaehun Kim, Junsung Byeon, Nahyun Lee, et al.
Small (Weinheim an Der Bergstrasse, Germany)|August 16, 2024
Highly Sustainable h-BN Encapsulated MoS<sub>2</sub> Hydrogen Evolution CatalystsJungmoon Lim, Su Jin Heo, Min Jung, et al.
Nano Letters|October 28, 2025
Strain-Dependent Contact Engineering in Monolayer MoS<sub>2</sub>: Enhancing Charge Carrier Transport through 1D Edge ContactsOnesik Harm, Junsung Byeon, Jungmoon Lim, et al.
Advanced Materials (Deerfield Beach, Fla.)|September 4, 2021
Electrode-Induced Self-Healed Monolayer MoS<sub>2</sub> for High Performance Transistors and PhototransistorsSangyeon Pak, Seunghun Jang, Taehun Kim, et al.
Nanotechnology|October 12, 2022
Facile one-pot iodine gas phase doping on 2D MoS<sub>2</sub>/CuS FET at room temperatureSangyeon Pak, Jiwon Son, Taehun Kim, et al.
Advanced Science (Weinheim, Baden-Wurttemberg, Germany)|May 22, 2024
Toward Ideal Low-Frequency Noise in Monolayer CVD MoS<sub>2</sub> FETs: Influence of van der Waals Junctions and Sulfur Vacancy ManagementWonjun Shin, Junsung Byeon, Ryun-Han Koo, et al.
Pageof 2