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Materials (Basel, Switzerland)|April 23, 2022
The Structural Evolution of Semipolar (11-22) Plane AlN Tem-Plate on <i>m</i>-Plane Sapphire Prepared by Sputtering and High Temperature AnnealingFabi Zhang, Jin Zhang, Lijie Huang, et al.
Nanotechnology|December 17, 2016
Broadband light-absorption InGaN photoanode assisted by imprint patterning and ZnO nanowire growth for energy conversionJunjie Kang, Vinh Quang Dang, Hongjian Li, et al.
Optics Express|November 14, 2024
Low-threshold green lasing in heterogeneously integrated InGaN-based micro-rings covered by distributed Bragg reflectors on Si (100)Wurui Song, Xingfei Zhang, Xiaoping Zhou, et al.
Optics Express|October 17, 2014
Enhanced performance of InGaN-based light emitting diodes through a special etch and regrown process in n-GaN layerBinglei Fu, Junjie Kang, Tongbo Wei, et al.
Nano Letters|June 11, 2024
Atomic Evolution Mechanism and Suppression of Edge Threading Dislocations in Nitride Remote HeteroepitaxyBo Shi, Zhetong Liu, Yang Li, et al.
Nature Communications|March 17, 2021
A plant-by-plant strategy for high-ambition coal power phaseout in ChinaRyna Yiyun Cui, Nathan Hultman, Diyang Cui, et al.
Advanced Materials (Deerfield Beach, Fla.)|March 13, 2025
Residual Al Adatoms Driven Epitaxy of AlGaN QWs for High-Performance UV LEDsTai Li, Zhaoying Chen, Tao Wang, et al.
Advanced Functional Materials|December 22, 2020
Sec-Eliminating the SARS-CoV-2 by AlGaN Based High Power Deep Ultraviolet Light SourceShangfeng Liu, Wei Luo, Dan Li, et al.
Advanced Materials (Deerfield Beach, Fla.)|March 17, 2022
Deep-Ultraviolet Micro-LEDs Exhibiting High Output Power and High Modulation Bandwidth SimultaneouslyDuo Li, Shangfeng Liu, Zeyuan Qian, et al.
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