Jove
Visualize
Contact Us
JoVE
x logofacebook logolinkedin logoyoutube logo
ABOUT JoVE
OverviewLeadershipBlogJoVE Help Center
AUTHORS
Publishing ProcessEditorial BoardScope & PoliciesPeer ReviewFAQSubmit
LIBRARIANS
TestimonialsSubscriptionsAccessResourcesLibrary Advisory BoardFAQ
RESEARCH
JoVE JournalMethods CollectionsJoVE Encyclopedia of ExperimentsArchive
EDUCATION
JoVE CoreJoVE BusinessJoVE Science EducationJoVE Lab ManualFaculty Resource CenterFaculty Site
Terms & Conditions of Use
Privacy Policy
Policies

Filters

Kah-Wee Ang

Showing results (11-20 of 61) with videos related to

Pageof 7
Sort By:
Physical Chemistry Chemical Physics : PCCP|December 12, 2024
Impact of grain boundaries on the electronic properties and Schottky barrier height in MoS<sub>2</sub>@Au heterojunctionsViacheslav Sorkin, Hangbo Zhou, Zhi Gen Yu, et al.
Scientific Reports|December 6, 2022
Author Correction: The effects of point defect type, location, and density on the Schottky barrier height of Au/MoS<sub>2</sub> heterojunction: a first-principles studyViacheslav Sorkin, Hangbo Zhou, Zhi Gen Yu, et al.
Nature Communications|March 20, 2025
Heterogeneous integration of 2D memristor arrays and silicon selectors for compute-in-memory hardware in convolutional neural networksSamarth Jain, Sifan Li, Haofei Zheng, et al.
ACS Applied Materials & Interfaces|April 22, 2024
An Atomically Resolved Schottky Barrier Height Approach for Bridging the Gap between Theory and Experiment at Metal-Semiconductor HeterojunctionsViacheslav Sorkin, Hangbo Zhou, Zhi Gen Yu, et al.
ACS Applied Materials & Interfaces|September 30, 2017
Infrared Black Phosphorus Phototransistor with Tunable Responsivity and Low Noise Equivalent PowerLi Huang, Wee Chong Tan, Lin Wang, et al.
Small (Weinheim an Der Bergstrasse, Germany)|May 17, 2023
Attack Resilient True Random Number Generators Using Ferroelectric-Enhanced Stochasticity in 2D TransistorYu-Chieh Chien, Heng Xiang, Jianze Wang, et al.
ACS Applied Materials & Interfaces|May 20, 2025
Ferroelectric Hf<sub>0.5</sub>Zr<sub>0.5</sub>O<sub>2</sub> with Enhanced Intermediate Polarization: A Platform for Neuromorphic and Logic-in-Memory ComputingHeng Xiang, Lingqi Li, Yu-Chieh Chien, et al.
Nanoscale|July 19, 2018
Tunable black phosphorus heterojunction transistors for multifunctional optoelectronicsLin Wang, Li Huang, Wee Chong Tan, et al.
Small (Weinheim an Der Bergstrasse, Germany)|September 27, 2023
Reliable Memristor Crossbar Array Based on 2D Layered Nickel Phosphorus Trisulfide for Energy-Efficient Neuromorphic HardwareZhengjin Weng, Haofei Zheng, Lingqi Li, et al.
Advanced Materials (Deerfield Beach, Fla.)|November 11, 2022
A MoS<sub>2</sub> Hafnium Oxide Based Ferroelectric Encoder for Temporal-Efficient Spiking Neural NetworkYu-Chieh Chien, Heng Xiang, Yufei Shi, et al.
Pageof 7

Showing results (11-20 of 61) with videos related to

Sort By:
Pageof 7
Physical Chemistry Chemical Physics : PCCP|December 12, 2024
Impact of grain boundaries on the electronic properties and Schottky barrier height in MoS<sub>2</sub>@Au heterojunctionsViacheslav Sorkin, Hangbo Zhou, Zhi Gen Yu, et al.
Scientific Reports|December 6, 2022
Author Correction: The effects of point defect type, location, and density on the Schottky barrier height of Au/MoS<sub>2</sub> heterojunction: a first-principles studyViacheslav Sorkin, Hangbo Zhou, Zhi Gen Yu, et al.
Nature Communications|March 20, 2025
Heterogeneous integration of 2D memristor arrays and silicon selectors for compute-in-memory hardware in convolutional neural networksSamarth Jain, Sifan Li, Haofei Zheng, et al.
ACS Applied Materials & Interfaces|April 22, 2024
An Atomically Resolved Schottky Barrier Height Approach for Bridging the Gap between Theory and Experiment at Metal-Semiconductor HeterojunctionsViacheslav Sorkin, Hangbo Zhou, Zhi Gen Yu, et al.
ACS Applied Materials & Interfaces|September 30, 2017
Infrared Black Phosphorus Phototransistor with Tunable Responsivity and Low Noise Equivalent PowerLi Huang, Wee Chong Tan, Lin Wang, et al.
Small (Weinheim an Der Bergstrasse, Germany)|May 17, 2023
Attack Resilient True Random Number Generators Using Ferroelectric-Enhanced Stochasticity in 2D TransistorYu-Chieh Chien, Heng Xiang, Jianze Wang, et al.
ACS Applied Materials & Interfaces|May 20, 2025
Ferroelectric Hf<sub>0.5</sub>Zr<sub>0.5</sub>O<sub>2</sub> with Enhanced Intermediate Polarization: A Platform for Neuromorphic and Logic-in-Memory ComputingHeng Xiang, Lingqi Li, Yu-Chieh Chien, et al.
Nanoscale|July 19, 2018
Tunable black phosphorus heterojunction transistors for multifunctional optoelectronicsLin Wang, Li Huang, Wee Chong Tan, et al.
Small (Weinheim an Der Bergstrasse, Germany)|September 27, 2023
Reliable Memristor Crossbar Array Based on 2D Layered Nickel Phosphorus Trisulfide for Energy-Efficient Neuromorphic HardwareZhengjin Weng, Haofei Zheng, Lingqi Li, et al.
Advanced Materials (Deerfield Beach, Fla.)|November 11, 2022
A MoS<sub>2</sub> Hafnium Oxide Based Ferroelectric Encoder for Temporal-Efficient Spiking Neural NetworkYu-Chieh Chien, Heng Xiang, Yufei Shi, et al.
Pageof 7