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Kah-Wee Ang

Showing results (51-60 of 61) with videos related to

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Advanced Materials (Deerfield Beach, Fla.)|December 22, 2017
A Black Phosphorus Carbide Infrared PhototransistorWee Chong Tan, Li Huang, Rui Jie Ng, et al.
ACS Nano|March 6, 2018
Direct n- to p-Type Channel Conversion in Monolayer/Few-Layer WS<sub>2</sub> Field-Effect Transistors by Atomic Nitrogen TreatmentBaoshan Tang, Zhi Gen Yu, Li Huang, et al.
Nature Communications|February 26, 2026
Low breakdown field and high ionization index in ReSe<sub>2</sub> avalanche field-effect transistorsJiaona Zhang, Jinyong Wang, Dexing Liu, et al.
Optics Letters|January 16, 2019
Aluminum nitride on insulator (AlNOI) platform for mid-infrared photonicsBowei Dong, Xianshu Luo, Shiyang Zhu, et al.
ACS Applied Materials & Interfaces|November 13, 2024
Memristor Array Based on Wafer-Scale 2D HfS<sub>2</sub> for Dual-Mode Physically Unclonable FunctionsHaofei Zheng, Lingqi Li, Yu-Chieh Chien, et al.
Nanoscale Horizons|October 18, 2023
Sublimation-based wafer-scale monolayer WS<sub>2</sub> formation <i>via</i> self-limited thinning of few-layer WS<sub>2</sub>Mingxi Chen, Jianwei Chai, Jing Wu, et al.
Optics Express|September 11, 2019
Thermal annealing study of the mid-infrared aluminum nitride on insulator (AlNOI) photonics platformBowei Dong, Xianshu Luo, Shiyang Zhu, et al.
Scientific Reports|April 23, 2016
Black Phosphorus Based Field Effect Transistors with Simultaneously Achieved Near Ideal Subthreshold Swing and High Hole Mobility at Room TemperatureXinke Liu, Kah-Wee Ang, Wenjie Yu, et al.
Advanced Materials (Deerfield Beach, Fla.)|August 26, 2021
Gate-Defined Quantum Confinement in CVD 2D WS<sub>2</sub>Chit Siong Lau, Jing Yee Chee, Liemao Cao, et al.
Nature Communications|March 4, 2024
Hardware implementation of memristor-based artificial neural networksFernando Aguirre, Abu Sebastian, Manuel Le Gallo, et al.
Pageof 7

Showing results (51-60 of 61) with videos related to

Sort By:
Pageof 7
Advanced Materials (Deerfield Beach, Fla.)|December 22, 2017
A Black Phosphorus Carbide Infrared PhototransistorWee Chong Tan, Li Huang, Rui Jie Ng, et al.
ACS Nano|March 6, 2018
Direct n- to p-Type Channel Conversion in Monolayer/Few-Layer WS<sub>2</sub> Field-Effect Transistors by Atomic Nitrogen TreatmentBaoshan Tang, Zhi Gen Yu, Li Huang, et al.
Nature Communications|February 26, 2026
Low breakdown field and high ionization index in ReSe<sub>2</sub> avalanche field-effect transistorsJiaona Zhang, Jinyong Wang, Dexing Liu, et al.
Optics Letters|January 16, 2019
Aluminum nitride on insulator (AlNOI) platform for mid-infrared photonicsBowei Dong, Xianshu Luo, Shiyang Zhu, et al.
ACS Applied Materials & Interfaces|November 13, 2024
Memristor Array Based on Wafer-Scale 2D HfS<sub>2</sub> for Dual-Mode Physically Unclonable FunctionsHaofei Zheng, Lingqi Li, Yu-Chieh Chien, et al.
Nanoscale Horizons|October 18, 2023
Sublimation-based wafer-scale monolayer WS<sub>2</sub> formation <i>via</i> self-limited thinning of few-layer WS<sub>2</sub>Mingxi Chen, Jianwei Chai, Jing Wu, et al.
Optics Express|September 11, 2019
Thermal annealing study of the mid-infrared aluminum nitride on insulator (AlNOI) photonics platformBowei Dong, Xianshu Luo, Shiyang Zhu, et al.
Scientific Reports|April 23, 2016
Black Phosphorus Based Field Effect Transistors with Simultaneously Achieved Near Ideal Subthreshold Swing and High Hole Mobility at Room TemperatureXinke Liu, Kah-Wee Ang, Wenjie Yu, et al.
Advanced Materials (Deerfield Beach, Fla.)|August 26, 2021
Gate-Defined Quantum Confinement in CVD 2D WS<sub>2</sub>Chit Siong Lau, Jing Yee Chee, Liemao Cao, et al.
Nature Communications|March 4, 2024
Hardware implementation of memristor-based artificial neural networksFernando Aguirre, Abu Sebastian, Manuel Le Gallo, et al.
Pageof 7