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Kalparupa Mukherjee

Showing results (1-10 of 3) with videos related to

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Materials (Basel, Switzerland)|October 29, 2020
Use of Bilayer Gate Insulator in GaN-on-Si Vertical Trench MOSFETs: Impact on Performance and ReliabilityKalparupa Mukherjee, Carlo De Santi, Matteo Borga, et al.
Micromachines|April 30, 2021
Understanding the Leakage Mechanisms and Breakdown Limits of Vertical GaN-on-Si p<sup>+</sup>n<sup>-</sup>n Diodes: The Road to Reliable Vertical MOSFETsKalparupa Mukherjee, Carlo De Santi, Matteo Buffolo, et al.
Materials (Basel, Switzerland)|May 5, 2021
Challenges and Perspectives for Vertical GaN-on-Si Trench MOS Reliability: From Leakage Current Analysis to Gate Stack OptimizationKalparupa Mukherjee, Carlo De Santi, Matteo Borga, et al.
Pageof 1

Showing results (1-10 of 3) with videos related to

Sort By:
Pageof 1
Materials (Basel, Switzerland)|October 29, 2020
Use of Bilayer Gate Insulator in GaN-on-Si Vertical Trench MOSFETs: Impact on Performance and ReliabilityKalparupa Mukherjee, Carlo De Santi, Matteo Borga, et al.
Micromachines|April 30, 2021
Understanding the Leakage Mechanisms and Breakdown Limits of Vertical GaN-on-Si p<sup>+</sup>n<sup>-</sup>n Diodes: The Road to Reliable Vertical MOSFETsKalparupa Mukherjee, Carlo De Santi, Matteo Buffolo, et al.
Materials (Basel, Switzerland)|May 5, 2021
Challenges and Perspectives for Vertical GaN-on-Si Trench MOS Reliability: From Leakage Current Analysis to Gate Stack OptimizationKalparupa Mukherjee, Carlo De Santi, Matteo Borga, et al.
Pageof 1