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Materials (Basel, Switzerland)|October 29, 2020
Use of Bilayer Gate Insulator in GaN-on-Si Vertical Trench MOSFETs: Impact on Performance and ReliabilityKalparupa Mukherjee, Carlo De Santi, Matteo Borga, et al.Nanotechnology|January 29, 2026
Local characterization and current-voltage modelling of conductive threading dislocations in AlGaN/GaN heterostructures grown on Si(111) and engineered poly-AlN substratesAlbert Minj, Andrea Pondini, Han Han, et al.Micromachines|April 30, 2021
Understanding the Leakage Mechanisms and Breakdown Limits of Vertical GaN-on-Si p+n-n Diodes: The Road to Reliable Vertical MOSFETsKalparupa Mukherjee, Carlo De Santi, Matteo Buffolo, et al.Scientific Reports|September 23, 2023
Development and analysis of thick GaN drift layers on 200 mm CTE-matched substrate for vertical device processingWalter Gonçalez Filho, Matteo Borga, Karen Geens, et al.Materials (Basel, Switzerland)|May 5, 2021
Challenges and Perspectives for Vertical GaN-on-Si Trench MOS Reliability: From Leakage Current Analysis to Gate Stack OptimizationKalparupa Mukherjee, Carlo De Santi, Matteo Borga, et al.Pageof 1