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Katsuhiro Tomioka

Showing results (1-10 of 20) with videos related to

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Nature|October 4, 2015
Condensed-matter Physics: Flat transistor defies the limitKatsuhiro Tomioka
Nature|August 3, 2012
A III-V nanowire channel on silicon for high-performance vertical transistorsKatsuhiro Tomioka, Masatoshi Yoshimura, Takashi Fukui
Scientific Reports|July 3, 2020
Rational synthesis of atomically thin quantum structures in nanowires based on nucleation processesKatsuhiro Tomioka, Junichi Motohisa, Takashi Fukui
Nano Letters|November 13, 2013
Sub 60 mV/decade switch using an InAs nanowire-Si heterojunction and turn-on voltage shift with a pulsed doping techniqueKatsuhiro Tomioka, Masatoshi Yoshimura, Takashi Fukui
Nanotechnology|July 14, 2020
Demonstration of InP/InAsP/InP axial heterostructure nanowire array vertical LEDsTomoya Akamatsu, Katsuhiro Tomioka, Junichi Motohisa
Nano Letters|October 16, 2015
Selective-Area Growth of InAs Nanowires on Ge and Vertical Transistor ApplicationKatsuhiro Tomioka, Fumiya Izhizaka, Takashi Fukui
Nano Letters|August 15, 2012
Bidirectional growth of indium phosphide nanowiresKeitaro Ikejiri, Fumiya Ishizaka, Katsuhiro Tomioka, et al.
Ambio|March 22, 2012
Position-controlled III-V compound semiconductor nanowire solar cells by selective-area metal-organic vapor phase epitaxyTakashi Fukui, Masatoshi Yoshimura, Eiji Nakai, et al.
Nanotechnology|March 2, 2013
GaAs nanowire growth on polycrystalline silicon thin films using selective-area MOVPEKeitaro Ikejiri, Fumiya Ishizaka, Katsuhiro Tomioka, et al.
Scientific Reports|February 1, 2022
Creation of unexplored tunnel junction by heterogeneous integration of InGaAs nanowires on germaniumAkinobu Yoshida, Hironori Gamo, Junichi Motohisa, et al.
Pageof 2

Showing results (1-10 of 20) with videos related to

Sort By:
Pageof 2
Nature|October 4, 2015
Condensed-matter Physics: Flat transistor defies the limitKatsuhiro Tomioka
Nature|August 3, 2012
A III-V nanowire channel on silicon for high-performance vertical transistorsKatsuhiro Tomioka, Masatoshi Yoshimura, Takashi Fukui
Scientific Reports|July 3, 2020
Rational synthesis of atomically thin quantum structures in nanowires based on nucleation processesKatsuhiro Tomioka, Junichi Motohisa, Takashi Fukui
Nano Letters|November 13, 2013
Sub 60 mV/decade switch using an InAs nanowire-Si heterojunction and turn-on voltage shift with a pulsed doping techniqueKatsuhiro Tomioka, Masatoshi Yoshimura, Takashi Fukui
Nanotechnology|July 14, 2020
Demonstration of InP/InAsP/InP axial heterostructure nanowire array vertical LEDsTomoya Akamatsu, Katsuhiro Tomioka, Junichi Motohisa
Nano Letters|October 16, 2015
Selective-Area Growth of InAs Nanowires on Ge and Vertical Transistor ApplicationKatsuhiro Tomioka, Fumiya Izhizaka, Takashi Fukui
Nano Letters|August 15, 2012
Bidirectional growth of indium phosphide nanowiresKeitaro Ikejiri, Fumiya Ishizaka, Katsuhiro Tomioka, et al.
Ambio|March 22, 2012
Position-controlled III-V compound semiconductor nanowire solar cells by selective-area metal-organic vapor phase epitaxyTakashi Fukui, Masatoshi Yoshimura, Eiji Nakai, et al.
Nanotechnology|March 2, 2013
GaAs nanowire growth on polycrystalline silicon thin films using selective-area MOVPEKeitaro Ikejiri, Fumiya Ishizaka, Katsuhiro Tomioka, et al.
Scientific Reports|February 1, 2022
Creation of unexplored tunnel junction by heterogeneous integration of InGaAs nanowires on germaniumAkinobu Yoshida, Hironori Gamo, Junichi Motohisa, et al.
Pageof 2