Related Experiment Video
Updated: Dec 15, 2025

Ultrahigh Density Array of Vertically Aligned Small-molecular Organic Nanowires on Arbitrary Substrates
Published on: June 18, 2013
Demonstration of InP/InAsP/InP axial heterostructure nanowire array vertical LEDs
Tomoya Akamatsu1, Katsuhiro Tomioka, Junichi Motohisa
1Graduate School of Information Science and Technology and Research Center for Integrated Quantum Electronics, Hokkaido University, North 14 West 9, Sapporo 060-0814, Japan.
Abstract:
Semiconductor nanowires (NWs), which have nanoscale footprints, enable us to realize various quantum structures with excellent position and size controllability, utilizing a wide range of materials for heterostructures. In addition, enhancing light extraction and controlling spontaneous emission by modifying their size and shape are possible. Thus, NWs are promising materials for nanoscale light sources applicable from visible to telecommunication bands. In this study, we grew InP/InAsP/InP axial heterostructure NWs, where the InAsP layer was embedded to serve as an active layer, by selective-area growth and demonstrated vertical NW array light-emitting diodes (LEDs) as a step towards realizing on-demand single photon sources. The NW array LEDs showed rectifying characteristics and electroluminescence originating from the embedded InAsP layer in the near-infrared region.

