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Updated: Jan 31, 2026

Production and Characterization of Vacuum Deposited Organic Light Emitting Diodes
Published on: November 16, 2018
Characterization of nanowire light-emitting diodes grown by selective-area metal-organic vapor-phase epitaxy
Junichi Motohisa1, Hiroki Kameda1, Masahiro Sasaki1
1Graduate School of Information Science and Technology and Research Center for Integrated Quantum Electronics, Hokkaido University, North 14 West 9, Sapporo 060-0814, Japan.
Abstract:
We report a systematic study on the current injection and radiative carrier recombination in InP nanowire (NW) light-emitting diodes (LEDs). The InP NWs with axial p-n structures, grown by selective-area metal organic vapor-phase epitaxy, had mixed crystal structures between those of zincblende and wurtzite, mainly in the p-regions. The temperature dependence of the current-voltage (I-V), electroluminescence (EL), and current-light output (I-L) characteristics was investigated. The temperature dependence of the I-V characteristics revealed that tunneling was the main mechanism of carrier transport through the p-n junction in the present NW-LEDs. The temperature and bias voltage dependences of EL showed a complex but systematic behavior, where peaks exhibiting bias-dependent and independent energy positions coexisted and the relative intensity showed a transition with increasing temperature. The external quantum efficiency showed a droop at low temperatures, indicating a reduced injection efficiency at low temperatures. These observations were explained by the radiative and nonradiative tunneling, and suggested a strong effect of the nonradiative tunneling at low temperatures.
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