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Kazuhiro Ohkawa

Showing results (1-10 of 23) with videos related to

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Optics Express|October 29, 2020
Enhanced performance of N-polar AlGaN-based deep-ultraviolet light-emitting diodesZhe Zhuang, Daisuke Iida, Kazuhiro Ohkawa
Optics Letters|April 15, 2021
Investigation of InGaN-based red/green micro-light-emitting diodesZhe Zhuang, Daisuke Iida, Kazuhiro Ohkawa
Optics Express|November 14, 2024
Enhancing the efficiency of InGaN-based micro-LEDs using indium tin oxide p-electrodesCesur Altinkaya, Daisuke Iida, Kazuhiro Ohkawa
Scientific Reports|July 30, 2020
Photoelectrochemical and crystalline properties of a GaN photoelectrode loaded with α-Fe<sub>2</sub>O<sub>3</sub> as cocatalystMartin Velazquez-Rizo, Daisuke Iida, Kazuhiro Ohkawa
Optics Express|October 7, 2021
Improved performance of InGaN-based red light-emitting diodes by micro-hole arraysZhe Zhuang, Daisuke Iida, Pavel Kirilenko, et al.
Chemical Communications (Cambridge, England)|August 9, 2023
Towards the quantification of the chemical mechanism of light-driven water splitting on GaN photoelectrodesArtem Shushanian, Daisuke Iida, Yu Han, et al.
Optics Letters|October 15, 2021
Ultra-small InGaN green micro-light-emitting diodes fabricated by selective passivation of p-GaNZhe Zhuang, Daisuke Iida, Martin Velazquez-Rizo, et al.
Scientific Reports|November 7, 2023
Investigation of N-polar InGaN growth on misoriented ScAlMgO<sub>4</sub> substratesMohammed A Najmi, Pavel Kirilenko, Daisuke Iida, et al.
RSC Advances|April 15, 2022
Analysis of the n-GaN electrochemical etching process and its mechanism in oxalic acidArtem Shushanian, Daisuke Iida, Zhe Zhuang, et al.
Optics Express|May 15, 2020
Optimal ITO transparent conductive layers for InGaN-based amber/red light-emitting diodesZhe Zhuang, Daisuke Iida, Pavel Kirilenko, et al.
Pageof 3

Showing results (1-10 of 23) with videos related to

Sort By:
Pageof 3
Optics Express|October 29, 2020
Enhanced performance of N-polar AlGaN-based deep-ultraviolet light-emitting diodesZhe Zhuang, Daisuke Iida, Kazuhiro Ohkawa
Optics Letters|April 15, 2021
Investigation of InGaN-based red/green micro-light-emitting diodesZhe Zhuang, Daisuke Iida, Kazuhiro Ohkawa
Optics Express|November 14, 2024
Enhancing the efficiency of InGaN-based micro-LEDs using indium tin oxide p-electrodesCesur Altinkaya, Daisuke Iida, Kazuhiro Ohkawa
Scientific Reports|July 30, 2020
Photoelectrochemical and crystalline properties of a GaN photoelectrode loaded with α-Fe<sub>2</sub>O<sub>3</sub> as cocatalystMartin Velazquez-Rizo, Daisuke Iida, Kazuhiro Ohkawa
Optics Express|October 7, 2021
Improved performance of InGaN-based red light-emitting diodes by micro-hole arraysZhe Zhuang, Daisuke Iida, Pavel Kirilenko, et al.
Chemical Communications (Cambridge, England)|August 9, 2023
Towards the quantification of the chemical mechanism of light-driven water splitting on GaN photoelectrodesArtem Shushanian, Daisuke Iida, Yu Han, et al.
Optics Letters|October 15, 2021
Ultra-small InGaN green micro-light-emitting diodes fabricated by selective passivation of p-GaNZhe Zhuang, Daisuke Iida, Martin Velazquez-Rizo, et al.
Scientific Reports|November 7, 2023
Investigation of N-polar InGaN growth on misoriented ScAlMgO<sub>4</sub> substratesMohammed A Najmi, Pavel Kirilenko, Daisuke Iida, et al.
RSC Advances|April 15, 2022
Analysis of the n-GaN electrochemical etching process and its mechanism in oxalic acidArtem Shushanian, Daisuke Iida, Zhe Zhuang, et al.
Optics Express|May 15, 2020
Optimal ITO transparent conductive layers for InGaN-based amber/red light-emitting diodesZhe Zhuang, Daisuke Iida, Pavel Kirilenko, et al.
Pageof 3