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ACS Applied Materials & Interfaces|November 1, 2016
Temperature Dependent Border Trap Response Produced by a Defective Interfacial Oxide Layer in Al<sub>2</sub>O<sub>3</sub>/InGaAs Gate StacksKechao Tang, Andrew C Meng, Ravi Droopad, et al.
ACS Applied Materials & Interfaces|February 3, 2017
Interface Defect Hydrogen Depassivation and Capacitance-Voltage Hysteresis of Al<sub>2</sub>O<sub>3</sub>/InGaAs Gate StacksKechao Tang, Felix Roberto Palumbo, Liangliang Zhang, et al.
Clinical & Translational Oncology : Official Publication of the Federation of Spanish Oncology Societies and of the National Cancer Institute of Mexico|December 20, 2023
A novel prognostic model for predicting patient survival and immunotherapy responsiveness in hepatocellular carcinoma: insights into the involvement of T-cell proliferationShengjie Tang, Rui Sun, Kechao Tang, et al.
Nanoscale|March 27, 2023
First direct observation of the built-in electric field and oxygen vacancy migration in ferroelectric Hf<sub>0.5</sub>Zr<sub>0.5</sub>O<sub>2</sub> film during electrical cyclingLiang Chen, Zhongxin Liang, Shixuan Shao, et al.
Nanotechnology|August 5, 2017
Electrochemical impedance spectroscopy for quantitative interface state characterization of planar and nanostructured semiconductor-dielectric interfacesAndrew C Meng, Kechao Tang, Michael R Braun, et al.
ACS Applied Materials & Interfaces|June 11, 2016
Effects of Titanium Layer Oxygen Scavenging on the High-k/InGaAs InterfaceRoy Winter, Pini Shekhter, Kechao Tang, et al.
ACS Applied Materials & Interfaces|September 4, 2015
Selective Passivation of GeO2/Ge Interface Defects in Atomic Layer Deposited High-k MOS StructuresLiangliang Zhang, Huanglong Li, Yuzheng Guo, et al.
Nanoscale|July 25, 2025
A novel high endurance HZO FeFET with monolayer graphene inserted in the gate oxideLiang Chen, Runteng Zhu, Xin Gao, et al.
Optics Express|December 31, 2020
Effect of heating/cooling dynamics in the hysteresis loop and tunable IR emissivity of VO<sub>2</sub> thin filmsMaria Cristina Larciprete, Marco Centini, Stefano Paoloni, et al.
ACS Applied Materials & Interfaces|January 26, 2018
Interfacial Cation-Defect Charge Dipoles in Stacked TiO<sub>2</sub>/Al<sub>2</sub>O<sub>3</sub> Gate DielectricsLiangliang Zhang, Anderson Janotti, Andrew C Meng, et al.
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