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Kei May Lau

Showing results (1-10 of 35) with videos related to

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Optics Letters|September 14, 2019
Electrically pumped 1.5  μm InP-based quantum dot microring lasers directly grown on (001) SiSi Zhu, Bei Shi, Kei May Lau
Optics Express|September 15, 2023
Monolithic integrated all-GaN-based µLED display by selective area regrowthYaying Liu, Zhaojun Liu, Kei May Lau
Optics Express|April 6, 2021
Monolithic integration of ultraviolet light emitting diodes and photodetectors on a p-GaN/AlGaN/GaN/Si platformQifeng Lyu, Huaxing Jiang, Kei May Lau
Nanotechnology|May 12, 2020
Multi-heterojunction InAs/GaSb nano-ridges directly grown on (001) SiZhao Yan, Yu Han, Kei May Lau
Optics Express|October 13, 2022
Full-color micro-display by heterogeneous integration of InGaN blue/green dual-wavelength and AlGaInP red LEDsPeian Li, Xu Zhang, Longheng Qi, et al.
Optics Express|June 8, 2018
Room-temperature electrically-pumped 1.5 μm InGaAs/InAlGaAs laser monolithically grown on on-axis (001) SiSi Zhu, Bei Shi, Qiang Li, et al.
Optics Letters|July 14, 2018
Monolithic integration of III-nitride voltage-controlled light emitters with dual-wavelength photodiodes by selective-area epitaxyChao Liu, Yuefei Cai, Huaxing Jiang, et al.
Optics Express|June 14, 2025
755 nm InP/GaAs<sub>0.65</sub>P<sub>0.35</sub> quantum dot laser with polarization-dependent emission from type-I and type-II band alignmentsWen Gu, Boqun Zhao, Ying Xue, et al.
Optics Letters|October 3, 2012
Epitaxial III-V-on-silicon waveguide butt-coupled photodetectorsShaoqi Feng, Yu Geng, Kei May Lau, et al.
Optics Express|July 13, 2011
Performance improvement of GaN-based light-emitting diodes grown on patterned Si substrate transferred to copperKei May Lau, Ka Ming Wong, Xinbo Zou, et al.
Pageof 4

Showing results (1-10 of 35) with videos related to

Sort By:
Pageof 4
Optics Letters|September 14, 2019
Electrically pumped 1.5  μm InP-based quantum dot microring lasers directly grown on (001) SiSi Zhu, Bei Shi, Kei May Lau
Optics Express|September 15, 2023
Monolithic integrated all-GaN-based µLED display by selective area regrowthYaying Liu, Zhaojun Liu, Kei May Lau
Optics Express|April 6, 2021
Monolithic integration of ultraviolet light emitting diodes and photodetectors on a p-GaN/AlGaN/GaN/Si platformQifeng Lyu, Huaxing Jiang, Kei May Lau
Nanotechnology|May 12, 2020
Multi-heterojunction InAs/GaSb nano-ridges directly grown on (001) SiZhao Yan, Yu Han, Kei May Lau
Optics Express|October 13, 2022
Full-color micro-display by heterogeneous integration of InGaN blue/green dual-wavelength and AlGaInP red LEDsPeian Li, Xu Zhang, Longheng Qi, et al.
Optics Express|June 8, 2018
Room-temperature electrically-pumped 1.5 μm InGaAs/InAlGaAs laser monolithically grown on on-axis (001) SiSi Zhu, Bei Shi, Qiang Li, et al.
Optics Letters|July 14, 2018
Monolithic integration of III-nitride voltage-controlled light emitters with dual-wavelength photodiodes by selective-area epitaxyChao Liu, Yuefei Cai, Huaxing Jiang, et al.
Optics Express|June 14, 2025
755 nm InP/GaAs<sub>0.65</sub>P<sub>0.35</sub> quantum dot laser with polarization-dependent emission from type-I and type-II band alignmentsWen Gu, Boqun Zhao, Ying Xue, et al.
Optics Letters|October 3, 2012
Epitaxial III-V-on-silicon waveguide butt-coupled photodetectorsShaoqi Feng, Yu Geng, Kei May Lau, et al.
Optics Express|July 13, 2011
Performance improvement of GaN-based light-emitting diodes grown on patterned Si substrate transferred to copperKei May Lau, Ka Ming Wong, Xinbo Zou, et al.
Pageof 4