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Ken Miyauchi

Showing results (1-10 of 6) with videos related to

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Sensors (Basel, Switzerland)|November 14, 2023
Analysis of Light Intensity and Charge Holding Time Dependence of Pinned Photodiode Full Well CapacityKen Miyauchi, Toshiyuki Isozaki, Rimon Ikeno, et al.
Sensors (Basel, Switzerland)|December 22, 2019
A 120-ke<sup>-</sup> Full-Well Capacity 160-µV/e<sup>-</sup> Conversion Gain 2.8-µm Backside-Illuminated Pixel with a Lateral Overflow Integration CapacitorIsao Takayanagi, Ken Miyauchi, Shunsuke Okura, et al.
Sensors (Basel, Switzerland)|May 13, 2023
An Area-Efficient up/down Double-Sampling Circuit for a LOFIC CMOS Image SensorAi Otani, Hiroaki Ogawa, Ken Miyauchi, et al.
Sensors (Basel, Switzerland)|October 16, 2025
An Area-Efficient Readout Circuit for a High-SNR Triple-Gain LOFIC CMOS Image SensorAi Otani, Hiroaki Ogawa, Ken Miyauchi, et al.
Sensors (Basel, Switzerland)|January 19, 2020
A Stacked Back Side-Illuminated Voltage Domain Global Shutter CMOS Image Sensor with a 4.0 μm Multiple Gain Readout Pixel <sup>†</sup>Ken Miyauchi, Kazuya Mori, Toshinori Otaka, et al.
Sensors (Basel, Switzerland)|December 31, 2025
Improvement in Random Noise for Pixel-Parallel Single-Slope ADC with Consideration of Flicker Noise EffectMasayuki Uno, Kwuang-Han Chang, Tsung-Hsun Tsai, et al.
Pageof 1

Showing results (1-10 of 6) with videos related to

Sort By:
Pageof 1
Sensors (Basel, Switzerland)|November 14, 2023
Analysis of Light Intensity and Charge Holding Time Dependence of Pinned Photodiode Full Well CapacityKen Miyauchi, Toshiyuki Isozaki, Rimon Ikeno, et al.
Sensors (Basel, Switzerland)|December 22, 2019
A 120-ke<sup>-</sup> Full-Well Capacity 160-µV/e<sup>-</sup> Conversion Gain 2.8-µm Backside-Illuminated Pixel with a Lateral Overflow Integration CapacitorIsao Takayanagi, Ken Miyauchi, Shunsuke Okura, et al.
Sensors (Basel, Switzerland)|May 13, 2023
An Area-Efficient up/down Double-Sampling Circuit for a LOFIC CMOS Image SensorAi Otani, Hiroaki Ogawa, Ken Miyauchi, et al.
Sensors (Basel, Switzerland)|October 16, 2025
An Area-Efficient Readout Circuit for a High-SNR Triple-Gain LOFIC CMOS Image SensorAi Otani, Hiroaki Ogawa, Ken Miyauchi, et al.
Sensors (Basel, Switzerland)|January 19, 2020
A Stacked Back Side-Illuminated Voltage Domain Global Shutter CMOS Image Sensor with a 4.0 μm Multiple Gain Readout Pixel <sup>†</sup>Ken Miyauchi, Kazuya Mori, Toshinori Otaka, et al.
Sensors (Basel, Switzerland)|December 31, 2025
Improvement in Random Noise for Pixel-Parallel Single-Slope ADC with Consideration of Flicker Noise EffectMasayuki Uno, Kwuang-Han Chang, Tsung-Hsun Tsai, et al.
Pageof 1