Jove
Visualize
Contact Us
JoVE
x logofacebook logolinkedin logoyoutube logo
ABOUT JoVE
OverviewLeadershipBlogJoVE Help Center
AUTHORS
Publishing ProcessEditorial BoardScope & PoliciesPeer ReviewFAQSubmit
LIBRARIANS
TestimonialsSubscriptionsAccessResourcesLibrary Advisory BoardFAQ
RESEARCH
JoVE JournalMethods CollectionsJoVE Encyclopedia of ExperimentsArchive
EDUCATION
JoVE CoreJoVE BusinessJoVE Science EducationJoVE Lab ManualFaculty Resource CenterFaculty Site
Terms & Conditions of Use
Privacy Policy
Policies

Filters

Kin Fai Mak

Showing results (21-30 of 95) with videos related to

Pageof 10
Sort By:
Physical Review Letters|September 17, 2016
Gate Tuning of Electronic Phase Transitions in Two-Dimensional NbSe_{2}Xiaoxiang Xi, Helmuth Berger, László Forró, et al.
Nature Materials|July 11, 2017
Valley magnetoelectricity in single-layer MoS<sub>2</sub>Jieun Lee, Zefang Wang, Hongchao Xie, et al.
Nature Materials|February 27, 2019
Nonlinear anomalous Hall effect in few-layer WTe<sub>2</sub>Kaifei Kang, Tingxin Li, Egon Sohn, et al.
Physical Review Letters|August 8, 2009
Observation of an electric-field-induced band gap in bilayer graphene by infrared spectroscopyKin Fai Mak, Chun Hung Lui, Jie Shan, et al.
Physical Review Letters|September 28, 2010
Ultrafast photoluminescence from grapheneChun Hung Lui, Kin Fai Mak, Jie Shan, et al.
Nature Nanotechnology|May 9, 2018
Controlling magnetism in 2D CrI<sub>3</sub> by electrostatic dopingShengwei Jiang, Lizhong Li, Zefang Wang, et al.
Proceedings of the National Academy of Sciences of the United States of America|August 11, 2010
The evolution of electronic structure in few-layer graphene revealed by optical spectroscopyKin Fai Mak, Matthew Y Sfeir, James A Misewich, et al.
Physical Review Letters|December 24, 2021
Quantum Oscillations in Two-Dimensional Insulators Induced by Graphite GatesJiacheng Zhu, Tingxin Li, Andrea F Young, et al.
Nano Letters|December 15, 2017
Electrical Tuning of Interlayer Exciton Gases in WSe<sub>2</sub> BilayersZefang Wang, Yi-Hsin Chiu, Kevin Honz, et al.
Physical Review Letters|January 15, 2011
Atomically thin MoS₂: a new direct-gap semiconductorKin Fai Mak, Changgu Lee, James Hone, et al.
Pageof 10

Showing results (21-30 of 95) with videos related to

Sort By:
Pageof 10
Physical Review Letters|September 17, 2016
Gate Tuning of Electronic Phase Transitions in Two-Dimensional NbSe_{2}Xiaoxiang Xi, Helmuth Berger, László Forró, et al.
Nature Materials|July 11, 2017
Valley magnetoelectricity in single-layer MoS<sub>2</sub>Jieun Lee, Zefang Wang, Hongchao Xie, et al.
Nature Materials|February 27, 2019
Nonlinear anomalous Hall effect in few-layer WTe<sub>2</sub>Kaifei Kang, Tingxin Li, Egon Sohn, et al.
Physical Review Letters|August 8, 2009
Observation of an electric-field-induced band gap in bilayer graphene by infrared spectroscopyKin Fai Mak, Chun Hung Lui, Jie Shan, et al.
Physical Review Letters|September 28, 2010
Ultrafast photoluminescence from grapheneChun Hung Lui, Kin Fai Mak, Jie Shan, et al.
Nature Nanotechnology|May 9, 2018
Controlling magnetism in 2D CrI<sub>3</sub> by electrostatic dopingShengwei Jiang, Lizhong Li, Zefang Wang, et al.
Proceedings of the National Academy of Sciences of the United States of America|August 11, 2010
The evolution of electronic structure in few-layer graphene revealed by optical spectroscopyKin Fai Mak, Matthew Y Sfeir, James A Misewich, et al.
Physical Review Letters|December 24, 2021
Quantum Oscillations in Two-Dimensional Insulators Induced by Graphite GatesJiacheng Zhu, Tingxin Li, Andrea F Young, et al.
Nano Letters|December 15, 2017
Electrical Tuning of Interlayer Exciton Gases in WSe<sub>2</sub> BilayersZefang Wang, Yi-Hsin Chiu, Kevin Honz, et al.
Physical Review Letters|January 15, 2011
Atomically thin MoS₂: a new direct-gap semiconductorKin Fai Mak, Changgu Lee, James Hone, et al.
Pageof 10