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Kin P Cheung

Showing results (1-10 of 19) with videos related to

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Journal of Applied Physics|January 2, 2023
On the "intrinsic" breakdown of thick gate oxideKin P Cheung
Power Electronic Devices and Components|January 16, 2023
Thick gate oxide extrinsic breakdown - the potential role of neutral hydrogen atomKin P Cheung
Journal of Applied Physics|August 8, 2023
A non-defect precursor gate oxide breakdown modelKin P Cheung
Micromachines|April 5, 2020
Nanoscale MOSFET as a Potential Room-Temperature Quantum Current SourceKin P Cheung, Chen Wang, Jason P Campbell
IEEE Transactions on Electron Devices|January 30, 2018
Local field effect on charge-capture/emission dynamicsKin P Cheung, Dmitry Veksler, Jason P Campbell
ACS Sensors|April 24, 2026
Electron Spin Resonance Sensor for Portable and Adaptable Retrospective DosimetryPragya R Shrestha, Kin P Cheung, Robert Gougelet, et al.
Applied Physics Letters|June 25, 2024
Ultrafast measurements of polarization switching dynamics on ferroelectric and anti-ferroelectric hafnium zirconium oxideMengwei Si, Xiao Lyu, Pragya R Shrestha, et al.
ACS Nano|January 9, 2014
Quantifying short-lived events in multistate ionic current measurementsArvind Balijepalli, Jessica Ettedgui, Andrew T Cornio, et al.
ACS Nano|November 17, 2015
Correction to Quantifying Short-Lived Events in Multistate Ionic Channel MeasurementsArvind Balijepalli, Jessica Ettedgui, Andrew T Cornio, et al.
IEEE Transactions on Electron Devices|June 13, 2024
Analysis and Control of RRAM Overshoot CurrentPragya R Shrestha, David M Nminibapiel, Jason P Campbell, et al.
Pageof 2

Showing results (1-10 of 19) with videos related to

Sort By:
Pageof 2
Journal of Applied Physics|January 2, 2023
On the "intrinsic" breakdown of thick gate oxideKin P Cheung
Power Electronic Devices and Components|January 16, 2023
Thick gate oxide extrinsic breakdown - the potential role of neutral hydrogen atomKin P Cheung
Journal of Applied Physics|August 8, 2023
A non-defect precursor gate oxide breakdown modelKin P Cheung
Micromachines|April 5, 2020
Nanoscale MOSFET as a Potential Room-Temperature Quantum Current SourceKin P Cheung, Chen Wang, Jason P Campbell
IEEE Transactions on Electron Devices|January 30, 2018
Local field effect on charge-capture/emission dynamicsKin P Cheung, Dmitry Veksler, Jason P Campbell
ACS Sensors|April 24, 2026
Electron Spin Resonance Sensor for Portable and Adaptable Retrospective DosimetryPragya R Shrestha, Kin P Cheung, Robert Gougelet, et al.
Applied Physics Letters|June 25, 2024
Ultrafast measurements of polarization switching dynamics on ferroelectric and anti-ferroelectric hafnium zirconium oxideMengwei Si, Xiao Lyu, Pragya R Shrestha, et al.
ACS Nano|January 9, 2014
Quantifying short-lived events in multistate ionic current measurementsArvind Balijepalli, Jessica Ettedgui, Andrew T Cornio, et al.
ACS Nano|November 17, 2015
Correction to Quantifying Short-Lived Events in Multistate Ionic Channel MeasurementsArvind Balijepalli, Jessica Ettedgui, Andrew T Cornio, et al.
IEEE Transactions on Electron Devices|June 13, 2024
Analysis and Control of RRAM Overshoot CurrentPragya R Shrestha, David M Nminibapiel, Jason P Campbell, et al.
Pageof 2