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Applied Optics|November 10, 2016
Pr3+:YLF mode-locked laser at 640 nm directly pumped by InGaN-diode lasersKodai Iijima, Ryosuke Kariyama, Hiroki Tanaka, et al.RSC Advances|May 6, 2022
Transistor properties of salen-type metal complexesKyohei Koyama, Kodai Iijima, Dongho Yoo, et al.Applied Optics|August 19, 2016
50-kHz, 50-ns UV pulse generation by diode-pumped frequency doubling Pr3+:YLF Q-switch laser with a Cr4+:YAG saturable absorberHiroki Tanaka, Ryosuke Kariyama, Kodai Iijima, et al.RSC Advances|May 11, 2022
Impact of bulky phenylalkyl substituents on the air-stable n-channel transistors of birhodanine analoguesKodai Iijima, Yann Le Gal, Dominique Lorcy, et al.Optics Express|September 15, 2015
Saturation of 640-nm absorption in Cr⁴⁺:YAG for an InGaN laser diode pumped passively Q-switched Pr³⁺:YLF laserHiroki Tanaka, Ryosuke Kariyama, Kodai Iijima, et al.ACS Applied Materials & Interfaces|March 7, 2018
Carrier Charge Polarity in Mixed-Stack Charge-Transfer Crystals Containing DithienobenzodithiopheneKodai Iijima, Ryo Sanada, Dongho Yoo, et al.Optics Express|July 21, 2023
Terahertz bandpass filter with Babinet complementary metamaterial mirrors and silicon subwavelength structureKasumi Miyata, Lisa Toyoshima, Kodai Iijima, et al.Journal of the American Chemical Society|March 5, 2016
Benzothienobenzothiophene-Based Molecular Conductors: High Conductivity, Large Thermoelectric Power Factor, and One-Dimensional InstabilityYasuhiro Kiyota, Tomofumi Kadoya, Kaoru Yamamoto, et al.Pageof 1