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Kyung Seok Woo

Showing results (1-10 of 16) with videos related to

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Chemical Reviews|December 20, 2024
Localized Conduction Channels in MemristorsKyung Seok Woo, R Stanley Williams, Suhas Kumar
Nature Communications|September 30, 2022
Probabilistic computing using Cu<sub>0.1</sub>Te<sub>0.9</sub>/HfO<sub>2</sub>/Pt diffusive memristorsKyung Seok Woo, Jaehyun Kim, Janguk Han, et al.
Nature Communications|April 15, 2024
Tunable stochastic memristors for energy-efficient encryption and computingKyung Seok Woo, Janguk Han, Su-In Yi, et al.
Advanced Materials (Deerfield Beach, Fla.)|December 10, 2022
Graph Analysis with Multifunctional Self-Rectifying Memristive Crossbar ArrayYoon Ho Jang, Janguk Han, Jihun Kim, et al.
Nanoscale Horizons|December 12, 2023
Heterogeneous reservoir computing in second-order Ta<sub>2</sub>O<sub>5</sub>/HfO<sub>2</sub> memristorsNestor Ghenzi, Tae Won Park, Seung Soo Kim, et al.
ACS Applied Materials & Interfaces|October 21, 2025
Cyclic Plasma Treatment for Enhancing the Synaptic Performance of Bulk-Conductive Resistive Switching MemoryJanguk Han, Hyungjun Park, Yoon Ho Jang, et al.
Nature Communications|October 1, 2021
Time-varying data processing with nonvolatile memristor-based temporal kernelYoon Ho Jang, Woohyun Kim, Jihun Kim, et al.
ACS Applied Materials & Interfaces|September 25, 2019
Electroforming-Free Bipolar Resistive Switching in GeSe Thin Films with a Ti-Containing ElectrodeWoohyun Kim, Chanyoung Yoo, Eui-Sang Park, et al.
Advanced Materials (Deerfield Beach, Fla.)|October 25, 2023
Spatiotemporal Data Processing with Memristor Crossbar-Array-Based Graph ReservoirYoon Ho Jang, Soo Hyung Lee, Janguk Han, et al.
Nanotechnology|June 20, 2018
Atomic layer deposition of GeSe films using HGeCl<sub>3</sub> and [(CH<sub>3</sub>)<sub>3</sub>Si]<sub>2</sub>Se with the discrete feeding method for the ovonic threshold switchWoohyun Kim, Sijung Yoo, Chanyoung Yoo, et al.
Pageof 2

Showing results (1-10 of 16) with videos related to

Sort By:
Pageof 2
Chemical Reviews|December 20, 2024
Localized Conduction Channels in MemristorsKyung Seok Woo, R Stanley Williams, Suhas Kumar
Nature Communications|September 30, 2022
Probabilistic computing using Cu<sub>0.1</sub>Te<sub>0.9</sub>/HfO<sub>2</sub>/Pt diffusive memristorsKyung Seok Woo, Jaehyun Kim, Janguk Han, et al.
Nature Communications|April 15, 2024
Tunable stochastic memristors for energy-efficient encryption and computingKyung Seok Woo, Janguk Han, Su-In Yi, et al.
Advanced Materials (Deerfield Beach, Fla.)|December 10, 2022
Graph Analysis with Multifunctional Self-Rectifying Memristive Crossbar ArrayYoon Ho Jang, Janguk Han, Jihun Kim, et al.
Nanoscale Horizons|December 12, 2023
Heterogeneous reservoir computing in second-order Ta<sub>2</sub>O<sub>5</sub>/HfO<sub>2</sub> memristorsNestor Ghenzi, Tae Won Park, Seung Soo Kim, et al.
ACS Applied Materials & Interfaces|October 21, 2025
Cyclic Plasma Treatment for Enhancing the Synaptic Performance of Bulk-Conductive Resistive Switching MemoryJanguk Han, Hyungjun Park, Yoon Ho Jang, et al.
Nature Communications|October 1, 2021
Time-varying data processing with nonvolatile memristor-based temporal kernelYoon Ho Jang, Woohyun Kim, Jihun Kim, et al.
ACS Applied Materials & Interfaces|September 25, 2019
Electroforming-Free Bipolar Resistive Switching in GeSe Thin Films with a Ti-Containing ElectrodeWoohyun Kim, Chanyoung Yoo, Eui-Sang Park, et al.
Advanced Materials (Deerfield Beach, Fla.)|October 25, 2023
Spatiotemporal Data Processing with Memristor Crossbar-Array-Based Graph ReservoirYoon Ho Jang, Soo Hyung Lee, Janguk Han, et al.
Nanotechnology|June 20, 2018
Atomic layer deposition of GeSe films using HGeCl<sub>3</sub> and [(CH<sub>3</sub>)<sub>3</sub>Si]<sub>2</sub>Se with the discrete feeding method for the ovonic threshold switchWoohyun Kim, Sijung Yoo, Chanyoung Yoo, et al.
Pageof 2