Jove
Visualize
Contact Us
JoVE
x logofacebook logolinkedin logoyoutube logo
ABOUT JoVE
OverviewLeadershipBlogJoVE Help Center
AUTHORS
Publishing ProcessEditorial BoardScope & PoliciesPeer ReviewFAQSubmit
LIBRARIANS
TestimonialsSubscriptionsAccessResourcesLibrary Advisory BoardFAQ
RESEARCH
JoVE JournalMethods CollectionsJoVE Encyclopedia of ExperimentsArchive
EDUCATION
JoVE CoreJoVE BusinessJoVE Science EducationJoVE Lab ManualFaculty Resource CenterFaculty Site
Terms & Conditions of Use
Privacy Policy
Policies

Filters

Kyung-Chang Ryoo

Showing results (1-10 of 4) with videos related to

Pageof 1
Sort By:
Journal of Nanoscience and Nanotechnology|September 13, 2012
Interface-modified unipolar resistive random access memory (RRAM) structure for low-power applicationKyung-Chang Ryoo, Jeong-Hoon Oh, Sunghun Jung, et al.
Journal of Nanoscience and Nanotechnology|September 13, 2012
Dimensional effect of non-polar resistive random access memory (RRAM) for low-power memory applicationKyung-Chang Ryoo, Jeong-Hoon Oh, Sunghun Jung, et al.
Small (Weinheim an Der Bergstrasse, Germany)|April 18, 2018
Scaling Effect on Silicon Nitride Memristor with Highly Doped Si SubstrateSungjun Kim, Sunghun Jung, Min-Hwi Kim, et al.
Journal of Nanoscience and Nanotechnology|November 30, 2011
Split-gate-structure 1T DRAM for retention characteristic improvementGaram Kim, Sang Wan Kim, Kyung-Chang Ryoo, et al.
Pageof 1

Showing results (1-10 of 4) with videos related to

Sort By:
Pageof 1
Journal of Nanoscience and Nanotechnology|September 13, 2012
Interface-modified unipolar resistive random access memory (RRAM) structure for low-power applicationKyung-Chang Ryoo, Jeong-Hoon Oh, Sunghun Jung, et al.
Journal of Nanoscience and Nanotechnology|September 13, 2012
Dimensional effect of non-polar resistive random access memory (RRAM) for low-power memory applicationKyung-Chang Ryoo, Jeong-Hoon Oh, Sunghun Jung, et al.
Small (Weinheim an Der Bergstrasse, Germany)|April 18, 2018
Scaling Effect on Silicon Nitride Memristor with Highly Doped Si SubstrateSungjun Kim, Sunghun Jung, Min-Hwi Kim, et al.
Journal of Nanoscience and Nanotechnology|November 30, 2011
Split-gate-structure 1T DRAM for retention characteristic improvementGaram Kim, Sang Wan Kim, Kyung-Chang Ryoo, et al.
Pageof 1