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ACS Omega|August 2, 2021
Superior Sensitivity and Optical Response of Blue Phosphorene and Its Doped Systems for Gas Sensing ApplicationsFatemeh Safari, Mahdi Moradinasab, Udo Schwalke, et al.Micromachines|April 29, 2020
Semi-Automated Extraction of the Distribution of Single Defects for nMOS TransistorsBernhard Stampfer, Franz Schanovsky, Tibor Grasser, et al.ACS Applied Electronic Materials|August 28, 2023
A Theoretical Study of Armchair Antimonene Nanoribbons in the Presence of Uniaxial Strain Based on First-Principles CalculationsArash Yazdanpanah Goharrizi, Ali Molajani Barzoki, Siegfried Selberherr, et al.Sensors (Basel, Switzerland)|January 20, 2019
Improved Sensing Capability of Integrated Semiconducting Metal Oxide Gas Sensor DevicesAyoub Lahlalia, Olivier Le Neel, Ravi Shankar, et al.Journal of Physics. Condensed Matter : an Institute of Physics Journal|July 15, 2026
Microscopic origins of electron trapping in amorphous silicon nitride (a-Si3N4) and its role in charge-trap flash memoryChristoph Wilhelmer, Lukas Hückmann, Jonathon Cottom, et al.The Journal of Chemical Physics|October 10, 2024
Machine learning force field for thermal oxidation of siliconLukas Cvitkovich, Franz Fehringer, Christoph Wilhelmer, et al.Nanomaterials (Basel, Switzerland)|August 26, 2023
Over- and Undercoordinated Atoms as a Source of Electron and Hole Traps in Amorphous Silicon Nitride (a-Si3N4)Christoph Wilhelmer, Dominic Waldhoer, Lukas Cvitkovich, et al.The Journal of Chemical Physics|May 15, 2023
Machine learning interatomic potential for silicon-nitride (Si3N4) by active learningDiego Milardovich, Christoph Wilhelmer, Dominic Waldhoer, et al.Proceedings. Mathematical, Physical, and Engineering Sciences|July 21, 2016
Role of hydrogen in volatile behaviour of defects in SiO2-based electronic devicesYannick Wimmer, Al-Moatasem El-Sayed, Wolfgang Gös, et al.Small (Weinheim an Der Bergstrasse, Germany)|October 11, 2024
A Two-Step Dry Etching Model for Non-Uniform Etching Profile in Gate-All-Around Field-Effect Transistor ManufacturingZiyi Hu, Junjie Li, Rui Chen, et al.Pageof 5