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Laurent Xu

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Scientific Reports|October 21, 2025
p-GaN source integrated GaN/AlGaN/GaN double heterojunction field-effect transistor (FET) for next-generation electronic applicationsMohit Kumar, Timothée Labau, Laurent Xu, et al.
Communications Engineering|July 3, 2026
A robust GaN p-FET with unconventional electron conductionMohit Kumar, Laurent Xu, Timothée Labau, et al.
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Showing results (1-10 of 2) with videos related to

Sort By:
Pageof 1
Scientific Reports|October 21, 2025
p-GaN source integrated GaN/AlGaN/GaN double heterojunction field-effect transistor (FET) for next-generation electronic applicationsMohit Kumar, Timothée Labau, Laurent Xu, et al.
Communications Engineering|July 3, 2026
A robust GaN p-FET with unconventional electron conductionMohit Kumar, Laurent Xu, Timothée Labau, et al.
Pageof 1