p-GaN source integrated GaN/AlGaN/GaN double heterojunction field-effect transistor (FET) for next-generation...

The continuous evolution of high-power and high-frequency electronic devices demands advanced semiconductor technologies. The proposed GaN p-FET device architecture incorporates a p-GaN source region that enables the simultaneous formation of two-dimensional electron gas (2DEG) and two-dimensional hole gas (2DHG) channels. This dual-channel mechanism enhances carrier confinement and mobility, offering a pivotal pathway toward high-performance GaN-based electronics. This simulation study systematically examines key parameters to optimize device configurations: Mg²⁺ doping (0.05 to 50 × 10¹⁹ cm^- 3), contact metal work function (4.0 to 6.3 eV), AlGaN layer thickness (4 to 25 nm), and Al mole fraction (0.1 to 0.45) in relation to the performance of p-GaN source layer n-GaN/AlGaN/GaN double heterostructure FETs. Extensive analyses reveal that a GaN pFET with a 5 nm p-GaN layer doped with 1 × 10¹⁹ cm^- 3 Mg²⁺ and a 10 nm AlGaN layer with an Al mole fraction of 0.2, demonstrates superior performance metrics. Compared to state-of-the-art technologies, this specific device configuration achieves optimal threshold voltage (~ |4| V) control, high I_ON/I_OFF ratios (0.39 × 10¹²), and minimized leakage current, essential for reliable high-performance operations. Additionally, the study highlights the critical impact of the contact metal work function, with a work function of 5.15 eV significantly reducing contact resistivity and minimizing leakage current, enhancing device efficiency. These findings highlight that precise control over doping, material thickness, and composition is essential for optimizing GaN pFET performance and reliability for next-generation electronic applications.