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LeGoues

Showing results (1-10 of 30) with videos related to

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Physical Review Letters|February 7, 1994
Self-aligned sources for dislocation nucleation: The key to low threading dislocation densities in compositionally graded thin films grown at low temperatureLeGoues
Physical Review Letters|May 30, 1994
Competing relaxation mechanisms in strained layersTersoff, LeGoues
Physical Review Letters|April 3, 1995
Strain Relief during Growth: CaF2 on Si(111)Tromp, LeGoues, Reuter
Physical Review Letters|January 1, 1990
Long-range order in thick, unstrained Si0.5Ge0.5 epitaxial layersLeGoues, Kesan, Iyer
Physical Review. B, Condensed Matter|July 15, 1991
Hydrogen segregation and trapping in the Al/Si(111) interfaceLiu, Marwick, LeGoues
Physical Review Letters|June 3, 1991
Anomalous strain relaxation in SiGe thin films and superlatticesLeGoues, Meyerson, Morar
Physical Review. B, Condensed Matter|December 15, 1990
Microstructure and strain relief of Ge films grown layer by layer on Si(001)LeGoues, Copel, Tromp
Physical Review. B, Condensed Matter|April 15, 1993
Critical test of the structure of the ordered phase in epitaxially grown SixGe1-x filmsLeGoues, Tromp, Kesan, et al.
Physical Review Letters|October 23, 1989
Novel strain-induced defect in thin molecular-beam epitaxy layersLeGoues, Copel, Tromp
Physical Review. B, Condensed Matter|July 15, 1992
Influence of surface reconstructions and epitaxial-growth conditions on long-range order in Si1-xGex alloysKesan, LeGoues, Iyer
Pageof 3

Showing results (1-10 of 30) with videos related to

Sort By:
Pageof 3
Physical Review Letters|February 7, 1994
Self-aligned sources for dislocation nucleation: The key to low threading dislocation densities in compositionally graded thin films grown at low temperatureLeGoues
Physical Review Letters|May 30, 1994
Competing relaxation mechanisms in strained layersTersoff, LeGoues
Physical Review Letters|April 3, 1995
Strain Relief during Growth: CaF2 on Si(111)Tromp, LeGoues, Reuter
Physical Review Letters|January 1, 1990
Long-range order in thick, unstrained Si0.5Ge0.5 epitaxial layersLeGoues, Kesan, Iyer
Physical Review. B, Condensed Matter|July 15, 1991
Hydrogen segregation and trapping in the Al/Si(111) interfaceLiu, Marwick, LeGoues
Physical Review Letters|June 3, 1991
Anomalous strain relaxation in SiGe thin films and superlatticesLeGoues, Meyerson, Morar
Physical Review. B, Condensed Matter|December 15, 1990
Microstructure and strain relief of Ge films grown layer by layer on Si(001)LeGoues, Copel, Tromp
Physical Review. B, Condensed Matter|April 15, 1993
Critical test of the structure of the ordered phase in epitaxially grown SixGe1-x filmsLeGoues, Tromp, Kesan, et al.
Physical Review Letters|October 23, 1989
Novel strain-induced defect in thin molecular-beam epitaxy layersLeGoues, Copel, Tromp
Physical Review. B, Condensed Matter|July 15, 1992
Influence of surface reconstructions and epitaxial-growth conditions on long-range order in Si1-xGex alloysKesan, LeGoues, Iyer
Pageof 3