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LeGoues

Showing results (21-30 of 30) with videos related to

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Physical Review. B, Condensed Matter|September 15, 1992
Raman spectroscopy of long-range order in epitaxial Si0.5Ge0.5 alloysTsang, Kesan, Freeouf, et al.
Physical Review Letters|July 11, 1994
Cyclic growth of strain-relaxed islandsLeGoues, Reuter, Tersoff, et al.
Physical Review Letters|December 19, 1994
Identification of a mobility-limiting scattering mechanism in modulation-doped Si/SiGe heterostructuresIsmail, LeGoues, Saenger, et al.
Physical Review Letters|August 26, 1991
Defect self-annihilation in surfactant-mediated epitaxial growthHorn-von Hoegen M, LeGoues, Copel, et al.
Science (New York, N.Y.)|October 16, 1987
The microstructure of high--critical current superconducting filmsP Chaudhari, F K Legoues, A Segmüller
Physical Review. B, Condensed Matter|December 15, 1991
Strain-relief mechanism in surfactant-grown epitaxial germanium films on Si(111)LeGoues, Horn-Von Hoegen M, Copel, et al.
Physical Review Letters|November 18, 1985
High-temperature SiO2 decomposition at the SiO2/Si interfaceTromp, Rubloff, Balk, et al.
Physical Review Letters|November 15, 1993
Observation of buried interfaces with low energy electron microscopyTromp, Denier van der Gon AW, LeGoues, et al.
Microscopy Research and Technique|October 21, 1998
In situ transmission electron microscopy observations of the formation of self-assembled Ge islands on SiF M Ross, J Tersoff, M Reuter, et al.
Physical Review. B, Condensed Matter|December 1, 1987
Properties of epitaxial films of YBa2Cu3O7- deltaChaudhari, Collins, Freitas, et al.
Pageof 3

Showing results (21-30 of 30) with videos related to

Sort By:
Pageof 3
You have reached the last page of results.This site can display upto 30 results.
Physical Review. B, Condensed Matter|September 15, 1992
Raman spectroscopy of long-range order in epitaxial Si0.5Ge0.5 alloysTsang, Kesan, Freeouf, et al.
Physical Review Letters|July 11, 1994
Cyclic growth of strain-relaxed islandsLeGoues, Reuter, Tersoff, et al.
Physical Review Letters|December 19, 1994
Identification of a mobility-limiting scattering mechanism in modulation-doped Si/SiGe heterostructuresIsmail, LeGoues, Saenger, et al.
Physical Review Letters|August 26, 1991
Defect self-annihilation in surfactant-mediated epitaxial growthHorn-von Hoegen M, LeGoues, Copel, et al.
Science (New York, N.Y.)|October 16, 1987
The microstructure of high--critical current superconducting filmsP Chaudhari, F K Legoues, A Segmüller
Physical Review. B, Condensed Matter|December 15, 1991
Strain-relief mechanism in surfactant-grown epitaxial germanium films on Si(111)LeGoues, Horn-Von Hoegen M, Copel, et al.
Physical Review Letters|November 18, 1985
High-temperature SiO2 decomposition at the SiO2/Si interfaceTromp, Rubloff, Balk, et al.
Physical Review Letters|November 15, 1993
Observation of buried interfaces with low energy electron microscopyTromp, Denier van der Gon AW, LeGoues, et al.
Microscopy Research and Technique|October 21, 1998
In situ transmission electron microscopy observations of the formation of self-assembled Ge islands on SiF M Ross, J Tersoff, M Reuter, et al.
Physical Review. B, Condensed Matter|December 1, 1987
Properties of epitaxial films of YBa2Cu3O7- deltaChaudhari, Collins, Freitas, et al.
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