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Optics Letters|April 15, 2021
High-power narrow spectrum GaSb-based DBR lasers emitting near 2.1 µmJiang Jiang, Leon Shterengas, Gela Kipshidze, et al.Applied Optics|November 2, 2017
Laterally coupled distributed feedback type-I quantum well cascade diode lasers emitting near 3.22 μmTao Feng, Takashi Hosoda, Leon Shterengas, et al.Optics Letters|September 14, 2018
External cavity type-I quantum well cascade diode lasers with a tuning range of 440 nm near 3 μmMeng Wang, Takashi Hosoda, Jiang Jiang, et al.Applied Optics|February 4, 2017
Materials design parameters for infrared device applications based on III-V semiconductorsStefan P Svensson, Wendy L Sarney, Dmitry Donetsky, et al.Nano Letters|December 22, 2017
Engineering Dirac Materials: Metamorphic InAs1-xSbx/InAs1-ySby Superlattices with Ultralow BandgapSergey Suchalkin, Gregory Belenky, Maksim Ermolaev, et al.Pageof 1