Jove
Visualize
Contact Us
JoVE
x logofacebook logolinkedin logoyoutube logo
ABOUT JoVE
OverviewLeadershipBlogJoVE Help Center
AUTHORS
Publishing ProcessEditorial BoardScope & PoliciesPeer ReviewFAQSubmit
LIBRARIANS
TestimonialsSubscriptionsAccessResourcesLibrary Advisory BoardFAQ
RESEARCH
JoVE JournalMethods CollectionsJoVE Encyclopedia of ExperimentsArchive
EDUCATION
JoVE CoreJoVE BusinessJoVE Science EducationJoVE Lab ManualFaculty Resource CenterFaculty Site
Terms & Conditions of Use
Privacy Policy
Policies

Filters

Liancheng Wang

Showing results (51-60 of 70) with videos related to

Pageof 7
Sort By:
Optics Letters|August 30, 2019
Simultaneously improve the luminous efficiency and color-rendering index of GaN-based white-light-emitting diodes using metal localized surface plasmon resonanceRongqiao Wan, Shuo Zhang, Zhiqiang Liu, et al.
RSC Advances|May 11, 2022
Crystallographic orientation control and optical properties of GaN nanowiresShaoteng Wu, Liancheng Wang, Xiaoyan Yi, et al.
Nature Communications|January 11, 2022
Enhanced hydrogen generation by reverse spillover effects over bicomponent catalystsZhe Gao, Guofu Wang, Tingyu Lei, et al.
Optics Express|April 4, 2024
Demonstration of 651 nm InGaN-based red light-emitting diode with an external quantum efficiency over 6% by InGaN/AlN strain release interlayerKun Xing, Junwei Hu, Zhengwei Pan, et al.
Optics Express|March 14, 2013
Nitride-based micron-scale hexagonal pyramids array vertical light emitting diodes by N-polar wet etchingJun Ma, Liancheng Wang, Zhiqiang Liu, et al.
Journal of Physics. Condensed Matter : an Institute of Physics Journal|March 10, 2011
The crystal structure and superconducting properties of monatomic bromineDefang Duan, Xing Meng, Fubo Tian, et al.
ACS Omega|October 9, 2019
Recovering Magnesium from Ferronickel Slag by Vacuum Reduction: Thermodynamic Analysis and Experimental VerificationXin Zhang, Foquan Gu, Zhiwei Peng, et al.
ACS Applied Materials & Interfaces|May 30, 2020
CoP/RGO-Pd Hybrids with Heterointerfaces as Highly Active Catalysts for Ethanol ElectrooxidationMengchao Wang, Ruimin Ding, Yicong Xiao, et al.
Nanoscale|March 10, 2018
Ultrafast growth of horizontal GaN nanowires by HVPE through flipping the substrateShaoteng Wu, Liancheng Wang, Zhiqiang Liu, et al.
Optics Letters|June 16, 2020
Three-dimensional metal-semiconductor-metal AlN deep-ultraviolet detectorTao Li, Linyun Long, Zelin Hu, et al.
Pageof 7

Showing results (51-60 of 70) with videos related to

Sort By:
Pageof 7
Optics Letters|August 30, 2019
Simultaneously improve the luminous efficiency and color-rendering index of GaN-based white-light-emitting diodes using metal localized surface plasmon resonanceRongqiao Wan, Shuo Zhang, Zhiqiang Liu, et al.
RSC Advances|May 11, 2022
Crystallographic orientation control and optical properties of GaN nanowiresShaoteng Wu, Liancheng Wang, Xiaoyan Yi, et al.
Nature Communications|January 11, 2022
Enhanced hydrogen generation by reverse spillover effects over bicomponent catalystsZhe Gao, Guofu Wang, Tingyu Lei, et al.
Optics Express|April 4, 2024
Demonstration of 651 nm InGaN-based red light-emitting diode with an external quantum efficiency over 6% by InGaN/AlN strain release interlayerKun Xing, Junwei Hu, Zhengwei Pan, et al.
Optics Express|March 14, 2013
Nitride-based micron-scale hexagonal pyramids array vertical light emitting diodes by N-polar wet etchingJun Ma, Liancheng Wang, Zhiqiang Liu, et al.
Journal of Physics. Condensed Matter : an Institute of Physics Journal|March 10, 2011
The crystal structure and superconducting properties of monatomic bromineDefang Duan, Xing Meng, Fubo Tian, et al.
ACS Omega|October 9, 2019
Recovering Magnesium from Ferronickel Slag by Vacuum Reduction: Thermodynamic Analysis and Experimental VerificationXin Zhang, Foquan Gu, Zhiwei Peng, et al.
ACS Applied Materials & Interfaces|May 30, 2020
CoP/RGO-Pd Hybrids with Heterointerfaces as Highly Active Catalysts for Ethanol ElectrooxidationMengchao Wang, Ruimin Ding, Yicong Xiao, et al.
Nanoscale|March 10, 2018
Ultrafast growth of horizontal GaN nanowires by HVPE through flipping the substrateShaoteng Wu, Liancheng Wang, Zhiqiang Liu, et al.
Optics Letters|June 16, 2020
Three-dimensional metal-semiconductor-metal AlN deep-ultraviolet detectorTao Li, Linyun Long, Zelin Hu, et al.
Pageof 7