Jove
Visualize
Contact Us
JoVE
x logofacebook logolinkedin logoyoutube logo
ABOUT JoVE
OverviewLeadershipBlogJoVE Help Center
AUTHORS
Publishing ProcessEditorial BoardScope & PoliciesPeer ReviewFAQSubmit
LIBRARIANS
TestimonialsSubscriptionsAccessResourcesLibrary Advisory BoardFAQ
RESEARCH
JoVE JournalMethods CollectionsJoVE Encyclopedia of ExperimentsArchive
EDUCATION
JoVE CoreJoVE BusinessJoVE Science EducationJoVE Lab ManualFaculty Resource CenterFaculty Site
Terms & Conditions of Use
Privacy Policy
Policies

Filters

Libor Strakos

Showing results (1-10 of 4) with videos related to

Pageof 1
Sort By:
Micron (Oxford, England : 1993)|August 3, 2021
Crystalline defect analysis in epitaxial Si<sub>0.7</sub>Ge<sub>0.3</sub> layer using site-specific ECCI-STEMHan Han, Libor Strakos, Thomas Hantschel, et al.
Nanoscale|April 5, 2018
Non-destructive characterization of extended crystalline defects in confined semiconductor device structuresAndreas Schulze, Libor Strakos, Tomas Vystavel, et al.
Ultramicroscopy|January 4, 2020
Enhancing the defect contrast in ECCI through angular filtering of BSEsHan Han, Thomas Hantschel, Andreas Schulze, et al.
Ultramicroscopy|January 10, 2020
Application of electron channeling contrast imaging to 3D semiconductor structures through proper detector configurationsHan Han, Thomas Hantschel, Libor Strakos, et al.
Pageof 1

Showing results (1-10 of 4) with videos related to

Sort By:
Pageof 1
Micron (Oxford, England : 1993)|August 3, 2021
Crystalline defect analysis in epitaxial Si<sub>0.7</sub>Ge<sub>0.3</sub> layer using site-specific ECCI-STEMHan Han, Libor Strakos, Thomas Hantschel, et al.
Nanoscale|April 5, 2018
Non-destructive characterization of extended crystalline defects in confined semiconductor device structuresAndreas Schulze, Libor Strakos, Tomas Vystavel, et al.
Ultramicroscopy|January 4, 2020
Enhancing the defect contrast in ECCI through angular filtering of BSEsHan Han, Thomas Hantschel, Andreas Schulze, et al.
Ultramicroscopy|January 10, 2020
Application of electron channeling contrast imaging to 3D semiconductor structures through proper detector configurationsHan Han, Thomas Hantschel, Libor Strakos, et al.
Pageof 1