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Liliental-Weber

Showing results (1-10 of 10) with videos related to

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Journal of Electron Microscopy|December 7, 2000
Derivation of growth mechanism of nano-defects in GaN from TEM dataLiliental-Weber
Physical Review Letters|June 10, 1991
Evidence for superconductivity in low-temperature-grown GaAsBaranowski, Liliental-Weber, Yau, et al.
Physical Review Letters|January 27, 1992
Baranowski et al. replyBaranowski, Liliental-Weber, Yau, et al.
Physical Review. B, Condensed Matter|March 15, 1990
Abrupt interfaces with novel structural and electronic properties: Metal-cluster deposition and metal-semiconductor junctionsWaddill, Vitomirov, Aldao, et al.
Physical Review. B, Condensed Matter|December 15, 1995
Sn submonolayer-mediated Ge heteroepitaxy on Si(001)Lin, Liliental-Weber, Washburn, et al.
Physical Review Letters|December 17, 2004
Atomic structure of defects in GaN:Mg grown with Ga polarityZ Liliental-Weber, T Tomaszewicz, D Zakharov, et al.
Physical Review. B, Condensed Matter|December 15, 1996
Strain-related phenomena in GaN thin filmsKisielowski, Krüger, Ruvimov, et al.
Microscopy and Microanalysis : the Official Journal of Microscopy Society of America, Microbeam Analysis Society, Microscopical Society of Canada|August 13, 2004
Screw dislocations in GaN grown by different methodsZ Liliental-Weber, D Zakharov, J Jasinski, et al.
Physical Review Letters|April 3, 2012
Large reaction rate enhancement in formation of ultrathin AuSi eutectic layersTyler S Matthews, Carolyn Sawyer, D Frank Ogletree, et al.
Journal of Electron Microscopy|August 27, 2005
Compositional modulation in In(x)Ga(1-x)N: TEM and X-ray studiesZuzanna Liliental-Weber, Dmitri N Zakharov, Kin M Yu, et al.
Pageof 1

Showing results (1-10 of 10) with videos related to

Sort By:
Pageof 1
Journal of Electron Microscopy|December 7, 2000
Derivation of growth mechanism of nano-defects in GaN from TEM dataLiliental-Weber
Physical Review Letters|June 10, 1991
Evidence for superconductivity in low-temperature-grown GaAsBaranowski, Liliental-Weber, Yau, et al.
Physical Review Letters|January 27, 1992
Baranowski et al. replyBaranowski, Liliental-Weber, Yau, et al.
Physical Review. B, Condensed Matter|March 15, 1990
Abrupt interfaces with novel structural and electronic properties: Metal-cluster deposition and metal-semiconductor junctionsWaddill, Vitomirov, Aldao, et al.
Physical Review. B, Condensed Matter|December 15, 1995
Sn submonolayer-mediated Ge heteroepitaxy on Si(001)Lin, Liliental-Weber, Washburn, et al.
Physical Review Letters|December 17, 2004
Atomic structure of defects in GaN:Mg grown with Ga polarityZ Liliental-Weber, T Tomaszewicz, D Zakharov, et al.
Physical Review. B, Condensed Matter|December 15, 1996
Strain-related phenomena in GaN thin filmsKisielowski, Krüger, Ruvimov, et al.
Microscopy and Microanalysis : the Official Journal of Microscopy Society of America, Microbeam Analysis Society, Microscopical Society of Canada|August 13, 2004
Screw dislocations in GaN grown by different methodsZ Liliental-Weber, D Zakharov, J Jasinski, et al.
Physical Review Letters|April 3, 2012
Large reaction rate enhancement in formation of ultrathin AuSi eutectic layersTyler S Matthews, Carolyn Sawyer, D Frank Ogletree, et al.
Journal of Electron Microscopy|August 27, 2005
Compositional modulation in In(x)Ga(1-x)N: TEM and X-ray studiesZuzanna Liliental-Weber, Dmitri N Zakharov, Kin M Yu, et al.
Pageof 1