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Sensors (Basel, Switzerland)
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August 16, 2013
A comprehensive review of semiconductor ultraviolet photodetectors: from thin film to one-dimensional nanostructures
Liwen Sang, Meiyong Liao, Masatomo Sumiya
Scientific Reports
|
March 30, 2016
P-Channel InGaN/GaN heterostructure metal-oxide-semiconductor field effect transistor based on polarization-induced two-dimensional hole gas
Kexiong Zhang, Masatomo Sumiya, Meiyong Liao, et al.
Scientific Reports
|
August 7, 2013
Arbitrary multicolor photodetection by hetero-integrated semiconductor nanostructures
Liwen Sang, Junqing Hu, Rujia Zou, et al.
Fundamental Research
|
June 27, 2024
High-pressure MOCVD growth of InGaN thick films toward the photovoltaic applications
Liwen Sang, Meiyong Liao, Masatomo Sumiya, et al.
Nanotechnology
|
November 16, 2013
High-detectivity nanowire photodetectors governed by bulk photocurrent dynamics with thermally stable carbide contacts
Rujia Zou, Zhenyu Zhang, Junqing Hu, et al.
ACS Omega
|
June 20, 2022
Polarity Control of an All-Sputtered Epitaxial GaN/AlN/Al Film on a Si(111) Substrate by Intermediate Oxidization
Takahiro Nagata, Yuya Suemoto, Yoshihiro Ueoka, et al.
Science and Technology of Advanced Materials
|
September 17, 2020
Strain-enhanced high <i>Q</i>-factor GaN micro-electromechanical resonator
Liwen Sang, Meiyong Liao, Xuelin Yang, et al.
Optics Express
|
May 5, 2019
High-performance visible to near-infrared photodetectors by using (Cd,Zn)Te single crystal
Bing Ren, Jijun Zhang, Meiyong Liao, et al.
Science and Technology of Advanced Materials
|
April 15, 2022
High reactivity of H<sub>2</sub>O vapor on GaN surfaces
Masatomo Sumiya, Masato Sumita, Yasutaka Tsuda, et al.
Small (Weinheim an Der Bergstrasse, Germany)
|
February 13, 2014
High detectivity solar-blind high-temperature deep-ultraviolet photodetector based on multi-layered (l00) facet-oriented β-Ga₂O₃ nanobelts
Rujia Zou, Zhenyu Zhang, Qian Liu, et al.
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of 2
Search research articles
Search
Showing results (1-10 of 19) with videos related to
Sort By:
Page
of 2
Sensors (Basel, Switzerland)
|
August 16, 2013
A comprehensive review of semiconductor ultraviolet photodetectors: from thin film to one-dimensional nanostructures
Liwen Sang, Meiyong Liao, Masatomo Sumiya
Scientific Reports
|
March 30, 2016
P-Channel InGaN/GaN heterostructure metal-oxide-semiconductor field effect transistor based on polarization-induced two-dimensional hole gas
Kexiong Zhang, Masatomo Sumiya, Meiyong Liao, et al.
Scientific Reports
|
August 7, 2013
Arbitrary multicolor photodetection by hetero-integrated semiconductor nanostructures
Liwen Sang, Junqing Hu, Rujia Zou, et al.
Fundamental Research
|
June 27, 2024
High-pressure MOCVD growth of InGaN thick films toward the photovoltaic applications
Liwen Sang, Meiyong Liao, Masatomo Sumiya, et al.
Nanotechnology
|
November 16, 2013
High-detectivity nanowire photodetectors governed by bulk photocurrent dynamics with thermally stable carbide contacts
Rujia Zou, Zhenyu Zhang, Junqing Hu, et al.
ACS Omega
|
June 20, 2022
Polarity Control of an All-Sputtered Epitaxial GaN/AlN/Al Film on a Si(111) Substrate by Intermediate Oxidization
Takahiro Nagata, Yuya Suemoto, Yoshihiro Ueoka, et al.
Science and Technology of Advanced Materials
|
September 17, 2020
Strain-enhanced high <i>Q</i>-factor GaN micro-electromechanical resonator
Liwen Sang, Meiyong Liao, Xuelin Yang, et al.
Optics Express
|
May 5, 2019
High-performance visible to near-infrared photodetectors by using (Cd,Zn)Te single crystal
Bing Ren, Jijun Zhang, Meiyong Liao, et al.
Science and Technology of Advanced Materials
|
April 15, 2022
High reactivity of H<sub>2</sub>O vapor on GaN surfaces
Masatomo Sumiya, Masato Sumita, Yasutaka Tsuda, et al.
Small (Weinheim an Der Bergstrasse, Germany)
|
February 13, 2014
High detectivity solar-blind high-temperature deep-ultraviolet photodetector based on multi-layered (l00) facet-oriented β-Ga₂O₃ nanobelts
Rujia Zou, Zhenyu Zhang, Qian Liu, et al.
Page
of 2