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M Lukosius

Showing results (1-10 of 4) with videos related to

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Nanoscale Advances|November 2, 2022
Reliable metal-graphene contact formation process flows in a CMOS-compatible environmentM Elviretti, M Lisker, R Lukose, et al.
Scientific Reports|June 24, 2021
Influence of plasma treatment on SiO<sub>2</sub>/Si and Si<sub>3</sub>N<sub>4</sub>/Si substrates for large-scale transfer of grapheneR Lukose, M Lisker, F Akhtar, et al.
ACS Applied Materials & Interfaces|September 1, 2020
High-Mobility Epitaxial Graphene on Ge/Si(100) SubstratesJ Aprojanz, Ph Rosenzweig, T T Nhung Nguyen, et al.
ACS Applied Materials & Interfaces|December 15, 2016
Metal-Free CVD Graphene Synthesis on 200 mm Ge/Si(001) SubstratesM Lukosius, J Dabrowski, J Kitzmann, et al.
Pageof 1

Showing results (1-10 of 4) with videos related to

Sort By:
Pageof 1
Nanoscale Advances|November 2, 2022
Reliable metal-graphene contact formation process flows in a CMOS-compatible environmentM Elviretti, M Lisker, R Lukose, et al.
Scientific Reports|June 24, 2021
Influence of plasma treatment on SiO<sub>2</sub>/Si and Si<sub>3</sub>N<sub>4</sub>/Si substrates for large-scale transfer of grapheneR Lukose, M Lisker, F Akhtar, et al.
ACS Applied Materials & Interfaces|September 1, 2020
High-Mobility Epitaxial Graphene on Ge/Si(100) SubstratesJ Aprojanz, Ph Rosenzweig, T T Nhung Nguyen, et al.
ACS Applied Materials & Interfaces|December 15, 2016
Metal-Free CVD Graphene Synthesis on 200 mm Ge/Si(001) SubstratesM Lukosius, J Dabrowski, J Kitzmann, et al.
Pageof 1