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Scientific Reports
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May 5, 2017
Dephasing rates for weak localization and universal conductance fluctuations in two dimensional Si:P and Ge:P δ-layers
Saquib Shamim, S Mahapatra, G Scappucci, et al.
Physical Review Letters
|
October 3, 2001
Metallic behavior in dilute two-dimensional hole systems
A R Hamilton, M Y Simmons, M Pepper, et al.
Nano Letters
|
May 11, 2011
A complete fabrication route for atomic-scale, donor-based devices in single-crystal germanium
G Scappucci, G Capellini, B Johnston, et al.
Physical Review Letters
|
September 26, 2012
n-type doping of germanium from phosphine: early stages resolved at the atomic level
G Scappucci, O Warschkow, G Capellini, et al.
Nature
|
July 19, 2019
A two-qubit gate between phosphorus donor electrons in silicon
Y He, S K Gorman, D Keith, et al.
Physical Review Letters
|
December 18, 2002
Origin of the oscillator strength of the triplet state of a trion in a magnetic field
D Sanvitto, D M Whittaker, A J Shields, et al.
Physical Review Letters
|
February 1, 2008
Kondo effect from a tunable bound state within a quantum wire
F Sfigakis, C J B Ford, M Pepper, et al.
Physical Review Letters
|
August 23, 2002
Hole-hole interaction effect in the conductance of the two-dimensional hole gas in the ballistic regime
Y Y Proskuryakov, A K Savchenko, S S Safonov, et al.
Physical Review Letters
|
October 4, 2003
Interaction effects at crossings of spin-polarized one-dimensional subbands
A C Graham, K J Thomas, M Pepper, et al.
Physical Review Letters
|
June 1, 2001
Fermi-liquid behavior of the low-density 2D hole gas in a GaAs/AlGaAs heterostructure at large values of r(s)
Y Y Proskuryakov, A K Savchenko, S S Safonov, et al.
Page
of 5
Search research articles
Search
Showing results (11-20 of 49) with videos related to
Sort By:
Page
of 5
Scientific Reports
|
May 5, 2017
Dephasing rates for weak localization and universal conductance fluctuations in two dimensional Si:P and Ge:P δ-layers
Saquib Shamim, S Mahapatra, G Scappucci, et al.
Physical Review Letters
|
October 3, 2001
Metallic behavior in dilute two-dimensional hole systems
A R Hamilton, M Y Simmons, M Pepper, et al.
Nano Letters
|
May 11, 2011
A complete fabrication route for atomic-scale, donor-based devices in single-crystal germanium
G Scappucci, G Capellini, B Johnston, et al.
Physical Review Letters
|
September 26, 2012
n-type doping of germanium from phosphine: early stages resolved at the atomic level
G Scappucci, O Warschkow, G Capellini, et al.
Nature
|
July 19, 2019
A two-qubit gate between phosphorus donor electrons in silicon
Y He, S K Gorman, D Keith, et al.
Physical Review Letters
|
December 18, 2002
Origin of the oscillator strength of the triplet state of a trion in a magnetic field
D Sanvitto, D M Whittaker, A J Shields, et al.
Physical Review Letters
|
February 1, 2008
Kondo effect from a tunable bound state within a quantum wire
F Sfigakis, C J B Ford, M Pepper, et al.
Physical Review Letters
|
August 23, 2002
Hole-hole interaction effect in the conductance of the two-dimensional hole gas in the ballistic regime
Y Y Proskuryakov, A K Savchenko, S S Safonov, et al.
Physical Review Letters
|
October 4, 2003
Interaction effects at crossings of spin-polarized one-dimensional subbands
A C Graham, K J Thomas, M Pepper, et al.
Physical Review Letters
|
June 1, 2001
Fermi-liquid behavior of the low-density 2D hole gas in a GaAs/AlGaAs heterostructure at large values of r(s)
Y Y Proskuryakov, A K Savchenko, S S Safonov, et al.
Page
of 5