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M Y Simmons

Showing results (21-30 of 49) with videos related to

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Nature Communications|April 21, 2016
Quantum simulation of the Hubbard model with dopant atoms in siliconJ Salfi, J A Mol, R Rahman, et al.
Nature Materials|April 8, 2014
Spatially resolving valley quantum interference of a donor in siliconJ Salfi, J A Mol, R Rahman, et al.
Physical Review Letters|October 4, 2003
Atomically precise placement of single dopants in siS R Schofield, N J Curson, M Y Simmons, et al.
Nature|June 22, 2022
Engineering topological states in atom-based semiconductor quantum dotsM Kiczynski, S K Gorman, H Geng, et al.
Physical Review Letters|June 29, 2006
Thermodynamic density of states of two-dimensional GaAs systems near the apparent metal-insulator transitionG Allison, E A Galaktionov, A K Savchenko, et al.
Nanotechnology|September 7, 2010
The use of etched registration markers to make four-terminal electrical contacts to STM-patterned nanostructuresF J Rueß, L Oberbeck, K E J Goh, et al.
Nature Nanotechnology|June 9, 2016
Spatial metrology of dopants in silicon with exact lattice site precisionM Usman, J Bocquel, J Salfi, et al.
Nature Communications|December 1, 2020
Valley interference and spin exchange at the atomic scale in siliconB Voisin, J Bocquel, A Tankasala, et al.
Nature Communications|November 10, 2015
Radio frequency measurements of tunnel couplings and singlet-triplet spin states in Si:P quantum dotsM G House, T Kobayashi, B Weber, et al.
Physical Review Letters|December 20, 2014
Noncollinear paramagnetism of a GaAs two-dimensional hole systemL A Yeoh, A Srinivasan, O Klochan, et al.
Pageof 5

Showing results (21-30 of 49) with videos related to

Sort By:
Pageof 5
Nature Communications|April 21, 2016
Quantum simulation of the Hubbard model with dopant atoms in siliconJ Salfi, J A Mol, R Rahman, et al.
Nature Materials|April 8, 2014
Spatially resolving valley quantum interference of a donor in siliconJ Salfi, J A Mol, R Rahman, et al.
Physical Review Letters|October 4, 2003
Atomically precise placement of single dopants in siS R Schofield, N J Curson, M Y Simmons, et al.
Nature|June 22, 2022
Engineering topological states in atom-based semiconductor quantum dotsM Kiczynski, S K Gorman, H Geng, et al.
Physical Review Letters|June 29, 2006
Thermodynamic density of states of two-dimensional GaAs systems near the apparent metal-insulator transitionG Allison, E A Galaktionov, A K Savchenko, et al.
Nanotechnology|September 7, 2010
The use of etched registration markers to make four-terminal electrical contacts to STM-patterned nanostructuresF J Rueß, L Oberbeck, K E J Goh, et al.
Nature Nanotechnology|June 9, 2016
Spatial metrology of dopants in silicon with exact lattice site precisionM Usman, J Bocquel, J Salfi, et al.
Nature Communications|December 1, 2020
Valley interference and spin exchange at the atomic scale in siliconB Voisin, J Bocquel, A Tankasala, et al.
Nature Communications|November 10, 2015
Radio frequency measurements of tunnel couplings and singlet-triplet spin states in Si:P quantum dotsM G House, T Kobayashi, B Weber, et al.
Physical Review Letters|December 20, 2014
Noncollinear paramagnetism of a GaAs two-dimensional hole systemL A Yeoh, A Srinivasan, O Klochan, et al.
Pageof 5