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Physical Chemistry Chemical Physics : PCCP|December 11, 2014
Effect of strain on the electronic and optical properties of Ge-Si dome shaped nanocrystalsMahesh R Neupane, Rajib Rahman, Roger K LakeACS Applied Materials & Interfaces|June 16, 2023
A Critical Review of Thermal Boundary Conductance across Wide and Ultrawide Bandgap Semiconductor InterfacesTianli Feng, Hao Zhou, Zhe Cheng, et al.Nature Communications|November 10, 2017
Anisotropic attosecond charge carrier dynamics and layer decoupling in quasi-2D layered SnS<sub>2</sub>Calley N Eads, Dmytro Bandak, Mahesh R Neupane, et al.ACS Nano|December 2, 2022
Low Power In-Memory Computation with Reciprocal Ferromagnet/Topological Insulator HeterostructuresHamed Vakili, Samiran Ganguly, George J de Coster, et al.Physical Chemistry Chemical Physics : PCCP|September 27, 2014
Nanoscale phononic interconnects in THz frequenciesAris P Sgouros, Mahesh R Neupane, M M Sigalas, et al.Advanced Materials (Deerfield Beach, Fla.)|January 16, 2015
Direct bandgap transition in many-layer MoS2 by plasma-induced layer decouplingRohan Dhall, Mahesh R Neupane, Darshana Wickramaratne, et al.Nano Letters|May 24, 2017
Opto-Valleytronic Spin Injection in Monolayer MoS<sub>2</sub>/Few-Layer Graphene Hybrid Spin ValvesYunqiu Kelly Luo, Jinsong Xu, Tiancong Zhu, et al.ACS Applied Materials & Interfaces|July 14, 2021
Epitaxial Molybdenum Disulfide/Gallium Nitride Junctions: Low-Knee-Voltage Schottky-Diode Behavior at Optimized InterfacesHae In Yang, Daniel J Coyle, Michelle Wurch, et al.Chemical Communications (Cambridge, England)|June 17, 2015
Two step growth phenomena of molybdenum disulfide-tungsten disulfide heterostructuresRobert Ionescu, Isaac Ruiz, Zach Favors, et al.Small (Weinheim an Der Bergstrasse, Germany)|April 17, 2018
Cross-Plane Carrier Transport in Van der Waals Layered MaterialsSina Najmaei, Mahesh R Neupane, Barbara M Nichols, et al.Pageof 3