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Nanoscale phononic interconnects in THz frequencies
Aris P Sgouros1, Mahesh R Neupane, M M Sigalas
1Department of Materials Science, University of Patras, 26504 Patras, Greece. sigalas@upatras.gr.
Physical Chemistry Chemical Physics : PCCP
|September 27, 2014
Summary
Phononic computing utilizes nanoscale resonators, waveguides, and switches on 3C-SiC and 3C-GeSi surfaces. Defects are introduced to tune vibrational properties for next-generation computing devices.
Area of Science:
- Materials Science
- Condensed Matter Physics
- Nanotechnology
Background:
- Phononic computing offers an alternative to electronic and optical computing.
- Developing efficient phononic interconnects is crucial for advancing this paradigm.
Purpose of the Study:
- To propose and analyze phononic interconnects (resonators, waveguides, switches).
- To investigate the impact of defects on phononic properties on 3C-SiC and 3C-GeSi surfaces.
Main Methods:
- Utilized molecular dynamics simulations with semi-empirical potentials.
- Calculated total phonon density of states (TPDOS) and partial phonon density of states (PPDOS).
- Analyzed phononic bandgap and phonon spectra variations.
Main Results:
- Demonstrated the feasibility of nano-scaled phononic interconnects on specific crystal surfaces.
- Showcased how defects (substitutional, vacancy) influence vibrational properties.
- Quantified changes in phononic bandgap and spectra due to defect engineering.
Conclusions:
- Engineered phononic interconnects show promise for integration with existing technologies.
- Defect engineering provides a pathway to tune phononic properties for specific applications.
- The proposed structures are relevant for current and future computing devices.
