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Manfred Helm

Showing results (41-50 of 80) with videos related to

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Advanced Science (Weinheim, Baden-Wurttemberg, Germany)|December 17, 2016
Light-Induced Switching of Tunable Single-Molecule JunctionsTorsten Sendler, Katharina Luka-Guth, Matthias Wieser, et al.
Nature Communications|June 28, 2019
Widely tunable GaAs bandgap via strain engineering in core/shell nanowires with large lattice mismatchLeila Balaghi, Genziana Bussone, Raphael Grifone, et al.
Nanotechnology|November 10, 2012
InP nanocrystals on silicon for optoelectronic applicationsSlawomir Prucnal, Shengqiang Zhou, Xin Ou, et al.
Nanoscale Advances|February 9, 2023
Formation of a vertical SnSe/SnSe<sub>2</sub> p-n heterojunction by NH<sub>3</sub> plasma-induced phase transformationYi Li, Juanmei Duan, Yonder Berencén, et al.
Optics Express|September 15, 2023
On-chip lateral Si:Te PIN photodiodes for room-temperature detection in the telecom optical wavelength bandsMohd Saif Shaikh, Shuyu Wen, Mircea-Traian Catuneanu, et al.
Nature Communications|November 18, 2021
High electron mobility in strained GaAs nanowiresLeila Balaghi, Si Shan, Ivan Fotev, et al.
Nanoscale Advances|May 12, 2025
Time-resolved nanospectroscopy of III-V semiconductor nanowiresAndrei Luferau, Alexej Pashkin, Stephan Winnerl, et al.
Nano Letters|February 25, 2017
Four-Wave Mixing in Landau-Quantized GrapheneJacob C König-Otto, Yongrui Wang, Alexey Belyanin, et al.
ACS Nano|July 6, 2024
At the Limit of Interfacial Sharpness in Nanowire Axial HeterostructuresDonovan Hilliard, Tina Tauchnitz, René Hübner, et al.
The Journal of Physical Chemistry Letters|May 30, 2024
Probing the Band Splitting near the Γ Point in the van der Waals Magnetic Semiconductor CrSBrKaiman Lin, Yi Li, Mahdi Ghorbani-Asl, et al.
Pageof 8

Showing results (41-50 of 80) with videos related to

Sort By:
Pageof 8
Advanced Science (Weinheim, Baden-Wurttemberg, Germany)|December 17, 2016
Light-Induced Switching of Tunable Single-Molecule JunctionsTorsten Sendler, Katharina Luka-Guth, Matthias Wieser, et al.
Nature Communications|June 28, 2019
Widely tunable GaAs bandgap via strain engineering in core/shell nanowires with large lattice mismatchLeila Balaghi, Genziana Bussone, Raphael Grifone, et al.
Nanotechnology|November 10, 2012
InP nanocrystals on silicon for optoelectronic applicationsSlawomir Prucnal, Shengqiang Zhou, Xin Ou, et al.
Nanoscale Advances|February 9, 2023
Formation of a vertical SnSe/SnSe<sub>2</sub> p-n heterojunction by NH<sub>3</sub> plasma-induced phase transformationYi Li, Juanmei Duan, Yonder Berencén, et al.
Optics Express|September 15, 2023
On-chip lateral Si:Te PIN photodiodes for room-temperature detection in the telecom optical wavelength bandsMohd Saif Shaikh, Shuyu Wen, Mircea-Traian Catuneanu, et al.
Nature Communications|November 18, 2021
High electron mobility in strained GaAs nanowiresLeila Balaghi, Si Shan, Ivan Fotev, et al.
Nanoscale Advances|May 12, 2025
Time-resolved nanospectroscopy of III-V semiconductor nanowiresAndrei Luferau, Alexej Pashkin, Stephan Winnerl, et al.
Nano Letters|February 25, 2017
Four-Wave Mixing in Landau-Quantized GrapheneJacob C König-Otto, Yongrui Wang, Alexey Belyanin, et al.
ACS Nano|July 6, 2024
At the Limit of Interfacial Sharpness in Nanowire Axial HeterostructuresDonovan Hilliard, Tina Tauchnitz, René Hübner, et al.
The Journal of Physical Chemistry Letters|May 30, 2024
Probing the Band Splitting near the Γ Point in the van der Waals Magnetic Semiconductor CrSBrKaiman Lin, Yi Li, Mahdi Ghorbani-Asl, et al.
Pageof 8