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Optics Express|November 11, 2025
Strain-engineered vertical emitting InGaAsSb quantum well lasers at 2-2.4 µm: in-well vs. barrier pumping, silicate bonding, and thermal optimizationMaximilian C Schuchter, Nicolas Huwyler, Matthias Golling, et al.
Optics Express|November 23, 2021
High average output power from a backside-cooled 2-µm InGaSb VECSEL with full gain characterizationMarco Gaulke, Jonas Heidrich, B Özgür Alaydin, et al.
Optics Express|April 12, 2025
Composition-controlled recovery time of SWIR (2-2.4 µm) GaSb-based SESAMsMaximilian C Schuchter, Marco Gaulke, Nicolas Huwyler, et al.
Optics Express|March 17, 2021
Full optical SESAM characterization methods in the 1.9 to 3-µm wavelength regimeJonas Heidrich, Marco Gaulke, Behcet Ozgur Alaydin, et al.
Optics Express|January 4, 2024
Gigahertz semiconductor laser at a center wavelength of 2 µm in single and dual-comb operationMarco Gaulke, Jonas Heidrich, Nicolas Huwyler, et al.
Optics Express|February 25, 2022
High-power low-noise 2-GHz femtosecond laser oscillator at 2.4 µmAjanta Barh, B Özgür Alaydin, Jonas Heidrich, et al.
Optics Express|February 24, 2023
Single-cavity dual-modelocked 2.36-µm laserAjanta Barh, Alexander Nussbaum-Lapping, Jonas Heidrich, et al.
Optics Express|June 11, 2024
Upconversion-pumped femtosecond thulium laser at 2309 nm mode-locked by a GaSb-based SESAMAleksey Tyazhev, Ji Eun Bae, Marco Gaulke, et al.
ACS Nano|January 11, 2020
Low-Temperature Electroluminescence Excitation Mapping of Excitons and Trions in Short-Channel Monochiral Carbon Nanotube DevicesMarco Gaulke, Alexander Janissek, Naga Anirudh Peyyety, et al.
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