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Markus Hellenbrand

Showing results (1-10 of 9) with videos related to

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Nano Convergence|September 14, 2023
Multi-level resistive switching in hafnium-oxide-based devices for neuromorphic computingMarkus Hellenbrand, Judith MacManus-Driscoll
MRS Communications|December 9, 2024
Progress of emerging non-volatile memory technologies in industryMarkus Hellenbrand, Isabella Teck, Judith L MacManus-Driscoll
ACS Applied Electronic Materials|January 6, 2022
Doping Profiles in Ultrathin Vertical VLS-Grown InAs Nanowire MOSFETs with High PerformanceAdam Jönsson, Johannes Svensson, Elisabetta Maria Fiordaliso, et al.
Materials Horizons|March 13, 2024
Growth of emergent simple pseudo-binary ferroelectrics and their potential in neuromorphic computing devicesAmpattu R Jayakrishnan, Ji S Kim, Markus Hellenbrand, et al.
Nano Letters|June 15, 2017
Individual Defects in InAs/InGaAsSb/GaSb Nanowire Tunnel Field-Effect Transistors Operating below 60 mV/decadeElvedin Memisevic, Markus Hellenbrand, Erik Lind, et al.
Chemistry of Materials : a Publication of the American Chemical Society|June 17, 2024
Sodium-Controlled Interfacial Resistive Switching in Thin Film Niobium Oxide for Neuromorphic ApplicationsBenedetta Gaggio, Atif Jan, Moritz Muller, et al.
ACS Applied Materials & Interfaces|July 7, 2026
Tunable Interfacial to Filamentary Resistive Switching Mechanism in Room-Temperature-Grown Amorphous YBa<sub>2</sub>Cu<sub>3</sub>O<sub><i>x</i></sub> with Excess Cu AdditionJohn Feighan, Ingon Kim, Ahmed Kursumovic, et al.
Science Advances|June 21, 2023
Thin-film design of amorphous hafnium oxide nanocomposites enabling strong interfacial resistive switching uniformityMarkus Hellenbrand, Babak Bakhit, Hongyi Dou, et al.
Science Advances|May 16, 2025
Engineered high endurance in WO<sub>3</sub>-based resistive switching devices via a guided filament approachZiyi Yuan, Babak Bakhit, Yi-Xuan Liu, et al.
Pageof 1

Showing results (1-10 of 9) with videos related to

Sort By:
Pageof 1
Nano Convergence|September 14, 2023
Multi-level resistive switching in hafnium-oxide-based devices for neuromorphic computingMarkus Hellenbrand, Judith MacManus-Driscoll
MRS Communications|December 9, 2024
Progress of emerging non-volatile memory technologies in industryMarkus Hellenbrand, Isabella Teck, Judith L MacManus-Driscoll
ACS Applied Electronic Materials|January 6, 2022
Doping Profiles in Ultrathin Vertical VLS-Grown InAs Nanowire MOSFETs with High PerformanceAdam Jönsson, Johannes Svensson, Elisabetta Maria Fiordaliso, et al.
Materials Horizons|March 13, 2024
Growth of emergent simple pseudo-binary ferroelectrics and their potential in neuromorphic computing devicesAmpattu R Jayakrishnan, Ji S Kim, Markus Hellenbrand, et al.
Nano Letters|June 15, 2017
Individual Defects in InAs/InGaAsSb/GaSb Nanowire Tunnel Field-Effect Transistors Operating below 60 mV/decadeElvedin Memisevic, Markus Hellenbrand, Erik Lind, et al.
Chemistry of Materials : a Publication of the American Chemical Society|June 17, 2024
Sodium-Controlled Interfacial Resistive Switching in Thin Film Niobium Oxide for Neuromorphic ApplicationsBenedetta Gaggio, Atif Jan, Moritz Muller, et al.
ACS Applied Materials & Interfaces|July 7, 2026
Tunable Interfacial to Filamentary Resistive Switching Mechanism in Room-Temperature-Grown Amorphous YBa<sub>2</sub>Cu<sub>3</sub>O<sub><i>x</i></sub> with Excess Cu AdditionJohn Feighan, Ingon Kim, Ahmed Kursumovic, et al.
Science Advances|June 21, 2023
Thin-film design of amorphous hafnium oxide nanocomposites enabling strong interfacial resistive switching uniformityMarkus Hellenbrand, Babak Bakhit, Hongyi Dou, et al.
Science Advances|May 16, 2025
Engineered high endurance in WO<sub>3</sub>-based resistive switching devices via a guided filament approachZiyi Yuan, Babak Bakhit, Yi-Xuan Liu, et al.
Pageof 1